LY

Lu You

AM AMD: 16 patents #22 of 1,053Top 3%
📍 Troy, NY: #1 of 43 inventorsTop 3%
🗺 New York: #18 of 9,423 inventorsTop 1%
Overall (2003): #428 of 273,478Top 1%
16
Patents 2003

Issued Patents 2003

Showing 1–16 of 16 patents

Patent #TitleCo-InventorsDate
6663787 Use of ta/tan for preventing copper contamination of low-k dielectric layers Christy Mei-Chu Woo, Pin-Chin Connie Wang 2003-12-16
6653735 CVD silicon carbide layer as a BARC and hard mask for gate patterning Chih-Yuh Yang, Douglas J. Bonser, Pei-Yuan Gao 2003-11-25
6638358 Method and system for processing a semiconductor device Mark S. Chang, Hao Fang 2003-10-28
6635943 Method and system for reducing charge gain and charge loss in interlayer dielectric formation Angela T. Hui, Tuan Pham, Richard J. Huang, Mark T. Ramsbey 2003-10-21
6632707 Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning Fei Wang, Lynne A. Okada, Ramkumar Subramanian, James Kai, Calvin T. Gabriel 2003-10-14
6627973 Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory semiconductor device Minh Van Ngo, Robert A. Huertas, King Wai Kelwin Ko, Pei-Yuan Gao 2003-09-30
6596631 Method of forming copper interconnect capping layers with improved interface and adhesion Minh Van Ngo, Hartmut Ruelke, Lothar Mergili, Joerg Hohage, Robert A. Huertas +1 more 2003-07-22
6586842 Dual damascene integration scheme for preventing copper contamination of dielectric layer Fei Wang, Christy Mei-Chu Woo 2003-07-01
6577009 Use of sic for preventing copper contamination of dielectric layer Fei Wang, Minh Van Ngo 2003-06-10
6576982 Use of sion for preventing copper contamination of dielectric layer Dawn Hopper, Minh Van Ngo 2003-06-10
6576545 Semiconductor devices with dual nature capping/ARC layers on fluorine doped silica glass inter-layer dielectrics and method of forming capping/ARC layers Dawn Hopper, Minh Van Ngo 2003-06-10
6573179 Forming a strong interface between interconnect and encapsulation to minimize electromigration Pin-Chin Connie Wang 2003-06-03
6566283 Silane treatment of low dielectric constant materials in semiconductor device manufacturing Suzette K. Pangrle, Minh Van Ngo, Dawn Hopper 2003-05-20
6530340 Apparatus for manufacturing planar spin-on films Dawn Hopper, Richard J. Huang 2003-03-11
6518646 Semiconductor device with variable composition low-k inter-layer dielectric and method of making Dawn Hopper, Suzette K. Pangrle, Calvin T. Gabriel, Richard J. Huang 2003-02-11
6518167 Method of forming a metal or metal nitride interface layer between silicon nitride and copper Matthew S. Buynoski, Paul R. Besser, Jeremias D. Romero, Pin-Chin Connie Wang, Minh Quoc Tran 2003-02-11