Issued Patents All Time
Showing 201–225 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6391792 | Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer | Juing-Yi Cheng, Chung-Long Chang | 2002-05-21 |
| 6387775 | Fabrication of MIM capacitor in copper damascene process | Mong-Song Liang | 2002-05-14 |
| 6383930 | Method to eliminate copper CMP residue of an alignment mark for damascene processes | Ying-Ho Chen, Wen-Chih Chiou, Tsu Shih | 2002-05-07 |
| 6376377 | Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity | Weng Chang, Ying-Ho Chen, Jih-Churng Twu | 2002-04-23 |
| 6372664 | Crack resistant multi-layer dielectric layer and method for formation thereof | Chu-Yun Fu, Chen-Hua Yu | 2002-04-16 |
| 6368952 | Diffusion inhibited dielectric structure for diffusion enhanced conductor layer | Mong-Song Liang | 2002-04-09 |
| 6365523 | Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers | Chu-Yun Fu, Ying-Ho Chen | 2002-04-02 |
| 6362085 | Method for reducing gate oxide effective thickness and leakage current | Mo Yu, Chen-Hua Yu | 2002-03-26 |
| 6362093 | Dual damascene method employing sacrificial via fill layer | Anthony Yen, Hung-Chang Hsieh | 2002-03-26 |
| 6358119 | Way to remove CU line damage after CU CMP | Tsu Shih, Jih-Churng Twu, Ying-Ho Chen | 2002-03-19 |
| 6358841 | Method of copper CMP on low dielectric constant HSQ material | Tien-I Bao | 2002-03-19 |
| 6358839 | Solution to black diamond film delamination problem | Lain-Jong Li, Shwangming Jeng | 2002-03-19 |
| 6350364 | Method for improvement of planarity of electroplated copper | — | 2002-02-26 |
| 6350693 | Method of CMP of polysilicon | Chung-Long Chang | 2002-02-26 |
| 6350694 | Reducing CMP scratch, dishing and erosion by post CMP etch back method for low-k materials | Weng Chang, Tien-I Bao | 2002-02-26 |
| 6346476 | Method for enhancing line-to-line capacitance uniformity of plasma enhanced chemical vapor deposited (PECVD) inter-metal dielectric (IMD) layers | Weng Chang | 2002-02-12 |
| 6329717 | Integrated circuit having selectivity deposited silicon oxide spacer layer formed therein | Chen-Hua Yu, Lung Chen, Lin-June Wu | 2001-12-11 |
| 6319809 | Method to reduce via poison in low-k Cu dual damascene by UV-treatment | Weng Chang, Lain-Jong Li, Shwang-Ming Jeng | 2001-11-20 |
| 6319784 | Using high temperature H2 anneal to recrystallize S/D and remove native oxide simultaneously | Mo Yu | 2001-11-20 |
| 6316348 | High selectivity Si-rich SiON etch-stop layer | Chu-Yun Fu, Chia-Shiung Tsai | 2001-11-13 |
| 6297162 | Method to reduce silicon oxynitride etch rate in a silicon oxide dry etch | Chu-Yan Fu, Yuan-Hung Chiu | 2001-10-02 |
| 6277745 | Passivation method of post copper dry etching | Chung-Shi Liu, Shau-Lin Shue, Chen-Hua Yu | 2001-08-21 |
| 6274483 | Method to improve metal line adhesion by trench corner shape modification | Weng Chang, Ying-Ho Chen | 2001-08-14 |
| 6274514 | HDP-CVD method for forming passivation layers with enhanced adhesion | Chu-Yun Fu | 2001-08-14 |
| 6271138 | Chemical mechanical polish (CMP) planarizing method with enhanced chemical mechanical polish (CMP) planarized layer planarity | Weng Chang | 2001-08-07 |