Issued Patents All Time
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6483173 | Solution to black diamond film delamination problem | Lain-Jong Li, Syun-Ming Jang | 2002-11-19 |
| 6457477 | Method of cleaning a copper/porous low-k dual damascene etch | Bao-Ru Young, Li-Chih Chao, Chi-Shiung Tsai | 2002-10-01 |
| 6451701 | Method for making low-resistance silicide contacts between closely spaced electrically conducting lines for field effect transistors | Mei-Yun Wang, Shau-Lin Shue | 2002-09-17 |
| 6358839 | Solution to black diamond film delamination problem | Lain-Jong Li, Syun-Ming Jang | 2002-03-19 |
| 6328815 | Multiple chamber vacuum processing system configuration for improving the stability of mark shielding process | Chen-Fang Chung | 2001-12-11 |
| 6277658 | Method for monitoring alignment mark shielding | Jeng-Horng Chen, Chen-Hua Yu | 2001-08-21 |
| 6268294 | Method of protecting a low-K dielectric material | Syun-Ming Jang, Weng Chang | 2001-07-31 |
| 6258715 | Process for low-k dielectric with dummy plugs | Chen-Hua Yu | 2001-07-10 |
| 6251777 | Thermal annealing method for forming metal silicide layer | Chen-Hua Yu | 2001-06-26 |
| 6242356 | Etchback method for forming microelectronic layer with enhanced surface smoothness | Syun-Ming Jang, Chung-Long Chang, Chen-Hua Yu | 2001-06-05 |
| 6207483 | Method for smoothing polysilicon gate structures in CMOS devices | Chu-Yun Fu, Chung-Long Chang, Syun-Ming Jang | 2001-03-27 |
| 6143673 | Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS | Syun-Ming Jang, Ying-Ho Chen, Chen-Hua Yu | 2000-11-07 |
| 6121111 | Method of removing tungsten near the wafer edge after CMP | Syun-Ming Jang, Chen-Hua Yu | 2000-09-19 |
| 6080638 | Formation of thin spacer at corner of shallow trench isolation (STI) | Chung-Te Lin, Yuan-Horng Chiu, Kong-Beng Thei | 2000-06-27 |