Issued Patents All Time
Showing 1–25 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12432963 | Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer | Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang +4 more | 2025-09-30 |
| 12387974 | Patterning interconnects and other structures by photo-sensitizing method | Wei-Jen Lo, Po-Cheng Shih, Tze-Liang Lee | 2025-08-12 |
| 12217936 | DC bias in plasma process | Sheng-Liang Pan, Bing Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen +1 more | 2025-02-04 |
| 12176251 | Semiconductor device with profiled work-function metal gate electrode and method of making | Da-Yuan Lee, Hung-Chin Chung, Hsien-Ming Lee, Kuan-Ting Liu, Weng Chang +1 more | 2024-12-24 |
| 12159837 | Chemical direct pattern plating method | Wen-Jiun Liu, Chen-Yuan Kao, Hung-Wen Su, Ming-Hsing Tsai | 2024-12-03 |
| 12033890 | Patterning interconnects and other structures by photo-sensitizing method | Wei-Jen Lo, Po-Cheng Shih, Tze-Liang Lee | 2024-07-09 |
| 11901455 | Method of manufacturing a FinFET by implanting a dielectric with a dopant | Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang +4 more | 2024-02-13 |
| 11854766 | DC bias in plasma process | Sheng-Liang Pan, Bing Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen +1 more | 2023-12-26 |
| 11824120 | Method of fabricating a source/drain recess in a semiconductor device | Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Ming-Hua Yu, Shih-Hao Lo +2 more | 2023-11-21 |
| 11804409 | Semiconductor device with profiled work-function metal gate electrode and method of making | Da-Yuan Lee, Hung-Chin Chung, Hsien-Ming Lee, Kuan-Ting Liu, Weng Chang +1 more | 2023-10-31 |
| 11676855 | Patterning interconnects and other structures by photo-sensitizing method | Wei-Jen Lo, Po-Cheng Shih, Tze-Liang Lee | 2023-06-13 |
| 11552018 | Chemical direct pattern plating method | Wen-Jiun Liu, Chen-Yuan Kao, Hung-Wen Su, Ming-Hsing Tsai | 2023-01-10 |
| 11532516 | Melting laser anneal of epitaxy regions | Su-Hao Liu, Wen-Yen Chen, Tz-Shian Chen, Cheng-Jung Sung, Li-Ting Wang +3 more | 2022-12-20 |
| 11456383 | Semiconductor device having a contact plug with an air gap spacer | Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang +4 more | 2022-09-27 |
| 11404245 | DC bias in plasma process | Sheng-Liang Pan, Bing Chen, Chia-Yang Hung, Jyu-Horng Shieh, Shu-Huei Suen +1 more | 2022-08-02 |
| 11245033 | Semiconductor devices with core-shell structures | Carlos H. Diaz, Chun-Hsiung Lin, Huicheng Chang, Chien-Hsun Wang, Mao-Lin Huang | 2022-02-08 |
| 11152508 | Semiconductor device including two-dimensional material layer | Chi On Chui, Sai-Hooi Yeong, Min Cao | 2021-10-19 |
| 11133307 | FinFETs with locally thinned gate structures and having different distances therebetween | Chih-Han Lin, Kuei-Yu Kao, Shih-Yao Lin, Ming-Ching Chang, Chao-Cheng Chen | 2021-09-28 |
| 11127741 | Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier | Chih-Han Lin, Kuei-Yu Kao, Shih-Yao Lin, Ming-Ching Chang, Chao-Cheng Chen | 2021-09-21 |
| 11107921 | Source/drain recess in a semiconductor device | Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Ming-Hua Yu, Shih-Hao Lo +2 more | 2021-08-31 |
| 11075124 | Semiconductor device with profiled work-function metal gate electrode and method of making | Da-Yuan Lee, Hung-Chin Chung, Hsien-Ming Lee, Kuan-Ting Liu, Weng Chang +1 more | 2021-07-27 |
| 10998269 | Chemical direct pattern plating method | Wen-Jiun Liu, Chen-Yuan Kao, Hung-Wen Su, Ming-Hsing Tsai | 2021-05-04 |
| 10978344 | Melting laser anneal of epitaxy regions | Su-Hao Liu, Wen-Yen Chen, Tz-Shian Chen, Cheng-Jung Sung, Li-Ting Wang +3 more | 2021-04-13 |
| 10867807 | Semiconductor device and method | Ming-Jie Huang, Ryan Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Tai-Chun Huang +3 more | 2020-12-15 |
| 10868139 | Controlling profiles of replacement gates | Chih-Han Lin, Kuei-Yu Kao, Ming-Ching Chang, Chan-Lon Yang, Chao-Cheng Chen | 2020-12-15 |