Issued Patents All Time
Showing 1–25 of 116 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426358 | Semiconductor device having epitaxy source/drain regions | Yi-Jing Lee, Kun-Mu Li, Tsz-Mei Kwok | 2025-09-23 |
| 12408367 | Semiconductor device | Che-Yu Lin, Tze-Liang Lee, Chan-Lon Yang | 2025-09-02 |
| 12389649 | Transistors with stacked semiconductor layers as channels | Tsung-Hsi Yang, Jeng-Wei Yu | 2025-08-12 |
| 12369374 | Epitaxial growth methods and structures thereof | Tetsuji Ueno, Chan-Lon Yang | 2025-07-22 |
| 12369342 | Increasing source/drain dopant concentration to reduced resistance | Yi-Jing Lee | 2025-07-22 |
| 12363993 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Tsz-Mei Kwok | 2025-07-15 |
| 12266687 | Semiconductor device and method | Che-Yu Lin, Yee-Chia Yeo | 2025-04-01 |
| 12243745 | Dynamic laser-assisted etching | Han-Yu Tang, Yee-Chia Yeo | 2025-03-04 |
| 12154974 | Source/drain formation with reduced selective loss defects | Chih-Chiang Chang, Li-Li Su | 2024-11-26 |
| 12119401 | Semiconductor device and methods of forming | Hung-Tai Chang, Han-Yu Tang, Yee-Chia Yeo | 2024-10-15 |
| 12075607 | Semiconductor device | Yi-Jing Lee, Tsz-Mei Kwok, Kun-Mu Li | 2024-08-27 |
| 12068322 | Method of forming a multi-layer epitaxial source/drain region having varying concentrations of boron and germanium therein | Han-Yu Tang, Hung-Tai Chang, Yee-Chia Yeo | 2024-08-20 |
| 12062710 | Increasing source/drain dopant concentration to reduced resistance | Yi-Jing Lee | 2024-08-13 |
| 12057450 | Epitaxy regions with large landing areas for contact plugs | Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu +5 more | 2024-08-06 |
| 12009427 | Semiconductor device and manufacturing method thereof | Kun-Mu Li, Tsz-Mei Kwok, Chan-Lon Yang | 2024-06-11 |
| 12002875 | Semiconductor devices and methods of manufacture | Wei Yang | 2024-06-04 |
| 11948971 | Confined source/drain epitaxy regions and method forming same | Jeng-Wei Yu, Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou | 2024-04-02 |
| 11916071 | Semiconductor device having epitaxy source/drain regions | Yi-Jing Lee, Kun-Mu Li, Tsz-Mei Kwok | 2024-02-27 |
| 11908742 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Tsz-Mei Kwok | 2024-02-20 |
| 11855188 | Source/drain formation with reduced selective loss defects | Chih-Chiang Chang, Li-Li Su | 2023-12-26 |
| 11830934 | Increasing source/drain dopant concentration to reduced resistance | Yi-Jing Lee | 2023-11-28 |
| 11824120 | Method of fabricating a source/drain recess in a semiconductor device | Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Shih-Hao Lo, Syun-Ming Jang +2 more | 2023-11-21 |
| 11797375 | System for debugging server startup sequence in debugging method applied in server | Xiao Zhou | 2023-10-24 |
| 11769771 | FinFET device having flat-top epitaxial features and method of making the same | Yi-Jing Lee, Li-Wei Chou | 2023-09-26 |
| 11749756 | Method for manufacturing semiconductor device | Che-Yu Lin, Tze-Liang Lee, Chan-Lon Yang | 2023-09-05 |