TK

Tsz-Mei Kwok

TSMC: 89 patents #310 of 12,232Top 3%
Overall (All Time): #17,916 of 4,157,543Top 1%
90
Patents All Time

Issued Patents All Time

Showing 1–25 of 90 patents

Patent #TitleCo-InventorsDate
12426358 Semiconductor device having epitaxy source/drain regions Yi-Jing Lee, Kun-Mu Li, Ming-Hua Yu 2025-09-23
12408362 Method of forming devices with strained source/drain structures Hsueh-Chang Sung, Kuan-Yu Chen, Hsien-Hsin Lin 2025-09-02
12363993 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Ming-Hua Yu 2025-07-15
12363945 Method of forming source/drain regions with quadrilateral layers Yung-Chun Yang, Cheng-Yen Wen, Li-Li Su, Yee-Chia Yeo 2025-07-15
12075607 Semiconductor device Yi-Jing Lee, Ming-Hua Yu, Kun-Mu Li 2024-08-27
12057450 Epitaxy regions with large landing areas for contact plugs Jung-Chi Tai, Yi-Fang Pai, Tsung-Hsi Yang, Jeng-Wei Yu, Cheng-Hsiung Yen +5 more 2024-08-06
12009427 Semiconductor device and manufacturing method thereof Kun-Mu Li, Ming-Hua Yu, Chan-Lon Yang 2024-06-11
11948971 Confined source/drain epitaxy regions and method forming same Jeng-Wei Yu, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu 2024-04-02
11916071 Semiconductor device having epitaxy source/drain regions Yi-Jing Lee, Kun-Mu Li, Ming-Hua Yu 2024-02-27
11908742 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Ming-Hua Yu 2024-02-20
11749752 Doping profile for strained source/drain region Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li 2023-09-05
11652105 Epitaxy regions with large landing areas for contact plugs Jung-Chi Tai, Yi-Fang Pai, Tsung-Hsi Yang, Jeng-Wei Yu, Cheng-Hsiung Yen +5 more 2023-05-16
11574916 Semiconductor device and manufacturing method thereof Yi-Jing Lee, Ming-Hua Yu, Kun-Mu Li 2023-02-07
11489074 Semiconductor device and manufacturing method thereof Kun-Mu Li, Ming-Hua Yu, Chan-Lon Yang 2022-11-01
11437515 Source and drain stressors with recessed top surfaces Kun-Mu Li, Hsueh-Chang Sung, Chii-Horng Li, Tze-Liang Lee 2022-09-06
11411098 Devices with strained source/drain structures and method of forming the same Hsueh-Chang Sung, Kuan-Yu Chen, Hsien-Hsin Lin 2022-08-09
11411109 MOS devices having epitaxy regions with reduced facets Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li 2022-08-09
11355500 Static random access memory cell and manufacturing method thereof Yi-Jing Lee, Ming-Hua Yu, Kun-Mu Li 2022-06-07
11276692 Manufacturing method of integrated circuit Yi-Jing Lee, Kun-Mu Li, Ming-Hua Yu 2022-03-15
11101347 Confined source/drain epitaxy regions and method forming same Jeng-Wei Yu, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu 2021-08-24
11037826 Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Ming-Hua Yu 2021-06-15
11031398 Structure and method for semiconductor device Yi-Jing Lee, Ming-Hua Yu 2021-06-08
10943790 Semiconductor devices and methods for manufacturing the same Chun Hsiung Tsai 2021-03-09
10916656 MOS devices having epitaxy regions with reduced facets Hsueh-Chang Sung, Kun-Mu Li, Tze-Liang Lee, Chii-Horng Li 2021-02-09
10879128 Semiconductor device and method of forming same Tsung-Hsi Yang, Jeng-Wei Yu, Li-Wei Chou, Ming-Hua Yu, Chii-Horng Li 2020-12-29