Issued Patents All Time
Showing 1–25 of 97 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12426358 | Semiconductor device having epitaxy source/drain regions | Yi-Jing Lee, Ming-Hua Yu, Tsz-Mei Kwok | 2025-09-23 |
| 12349392 | Semiconductor device and manufacturing method thereof | Liang Chen, Wen-Chu Hsiao | 2025-07-01 |
| 12218240 | Source/drain regions of FinFET devices and methods of forming same | Heng-Wen Ting, Yen-Ru Lee, Hsueh-Chang Sung | 2025-02-04 |
| 12112986 | FinFET device and method | Heng-Wen Ting, Hsueh-Chang Sung, Yen-Ru Lee, Chien-Wei Lee | 2024-10-08 |
| 12075607 | Semiconductor device | Yi-Jing Lee, Tsz-Mei Kwok, Ming-Hua Yu | 2024-08-27 |
| 12062720 | Epitaxial source/drain structure and method of forming same | Hsueh-Chang Sung | 2024-08-13 |
| 12009427 | Semiconductor device and manufacturing method thereof | Tsz-Mei Kwok, Ming-Hua Yu, Chan-Lon Yang | 2024-06-11 |
| 11916071 | Semiconductor device having epitaxy source/drain regions | Yi-Jing Lee, Ming-Hua Yu, Tsz-Mei Kwok | 2024-02-27 |
| 11888046 | Epitaxial fin structures of finFET having an epitaxial buffer region and an epitaxial capping region | Hsueh-Chang Sung | 2024-01-30 |
| 11768667 | Compiling method, compiling device, execution method, computer-readable storage medium and computer device | Sujia JIANG, Cunqing LI, Zhe Zhang, Zhenyan ZHAO | 2023-09-26 |
| 11749752 | Doping profile for strained source/drain region | Hsueh-Chang Sung, Tsz-Mei Kwok, Tze-Liang Lee, Chii-Horng Li | 2023-09-05 |
| 11735664 | Source/drain regions of FINFET devices and methods of forming same | Heng-Wen Ting, Yen-Ru Lee, Hsueh-Chang Sung | 2023-08-22 |
| 11610994 | Epitaxial source/drain structure and method of forming same | Hsueh-Chang Sung | 2023-03-21 |
| 11574916 | Semiconductor device and manufacturing method thereof | Yi-Jing Lee, Tsz-Mei Kwok, Ming-Hua Yu | 2023-02-07 |
| 11532749 | Semiconductor structure with blocking layer | Wei-Yang Lee, Wen-Chu Hsiao | 2022-12-20 |
| 11489074 | Semiconductor device and manufacturing method thereof | Tsz-Mei Kwok, Ming-Hua Yu, Chan-Lon Yang | 2022-11-01 |
| 11437515 | Source and drain stressors with recessed top surfaces | Tsz-Mei Kwok, Hsueh-Chang Sung, Chii-Horng Li, Tze-Liang Lee | 2022-09-06 |
| 11411109 | MOS devices having epitaxy regions with reduced facets | Hsueh-Chang Sung, Tze-Liang Lee, Chii-Horng Li, Tsz-Mei Kwok | 2022-08-09 |
| 11393420 | Display device, pixel circuit and its driving method and driving device | Dayu Zhang, Yifei Zhan, Xiaohan Ling | 2022-07-19 |
| 11355500 | Static random access memory cell and manufacturing method thereof | Yi-Jing Lee, Tsz-Mei Kwok, Ming-Hua Yu | 2022-06-07 |
| 11309418 | Contact structure for FinFET semiconductor device | Liang Chen, Wen-Chu Hsiao | 2022-04-19 |
| 11276692 | Manufacturing method of integrated circuit | Yi-Jing Lee, Ming-Hua Yu, Tsz-Mei Kwok | 2022-03-15 |
| 11216099 | Array substrate and manufacturing method thereof, display panel and display device | Jingang Zhang | 2022-01-04 |
| 11211473 | Epitaxial fin structures having an epitaxial buffer region and an epitaxial capping region | Hsueh-Chang Sung | 2021-12-28 |
| 11130447 | Vehicle rear-view mirror and method for controlling the same, control system of the vehicle rear-view mirror | — | 2021-09-28 |