Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12349392 | Semiconductor device and manufacturing method thereof | Kun-Mu Li, Liang Chen | 2025-07-01 |
| 12278146 | Fin field-effect transistor device and method of forming the same | Che-Yu Lin, Chien-Wei Lee, Chien-Hung Chen, Yee-Chia Yeo | 2025-04-15 |
| 12237404 | Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a Fin and resulting semiconductor devices | Che-Yu Lin, Chien-Hung Chen | 2025-02-25 |
| 11721745 | Methods for increasing germanium concentration of surfaces of a silicon germanium portion of a fin and resulting semiconductor devices | Che-Yu Lin, Chien-Hung Chen | 2023-08-08 |
| 11532749 | Semiconductor structure with blocking layer | Kun-Mu Li, Wei-Yang Lee | 2022-12-20 |
| 11527442 | Fin field-effect transistor device and method of forming the same | Che-Yu Lin, Chien-Wei Lee, Chien-Hung Chen, Yee-Chia Yeo | 2022-12-13 |
| 11309418 | Contact structure for FinFET semiconductor device | Kun-Mu Li, Liang Chen | 2022-04-19 |
| 11088028 | Fin field-effect transistor device and method of forming the same | Che-Yu Lin, Chien-Wei Lee, Chien-Hung Chen, Yee-Chia Yeo | 2021-08-10 |
| 11011623 | Method for increasing germanium concentration of FIN and resulting semiconductor device | Che-Yu Lin, Chien-Hung Chen | 2021-05-18 |
| 10868181 | Semiconductor structure with blocking layer and method for forming the same | Kun-Mu Li, Wei-Yang Lee | 2020-12-15 |
| 10727131 | Source and drain epitaxy re-shaping | Kun-Mu Li, Chih-Chiang Chang, Che-Yu Lin, Wei Yang | 2020-07-28 |
| 10297690 | Method of forming a contact structure for a FinFET semiconductor device | Kun-Mu Li, Liang Chen | 2019-05-21 |
| 10269648 | Method of fabricating a semiconductor device structure | Kun-Mu Li, Chih-Chiang Chang | 2019-04-23 |
| 9735271 | Semiconductor device | Lai-Wan Chong, Chun-Chieh Wang, Ying-Min Chou, Hsiang Hsiang Ko, Ying-Lang Wang | 2017-08-15 |
| 9698263 | Surface tension modification using silane with hydrophobic functional group for thin film deposition | Lai-Wan Chong, Ying-Min Chou, Hsiang Hsiang Ko | 2017-07-04 |
| 9634119 | Semiconductor devices utilizing partially doped stressor film portions | Ju Wen Hsiao, Ying-Min Chou, Hsiang Hsiang Ko, Ying-Lang Wang | 2017-04-25 |
| 9543387 | Semiconductor device and manufacturing method thereof | Shih-Chieh Chang, Ying-Min Chou, Yi-Ming Huang, Hsiu-Ting Chen, Huai-Tei Yang | 2017-01-10 |
| 9324863 | Semiconductor device | Lai-Wan Chong, Chun-Chieh Wang, Ying-Min Chou, Hsiang Hsiang Ko, Ying-Lang Wang | 2016-04-26 |
| 9214393 | Surface tension modification using silane with hydrophobic functional group for thin film deposition | Lai-Wan Chong, Ying-Min Chou, Hsiang Hsiang Ko | 2015-12-15 |
| 9064892 | Semiconductor devices utilizing partially doped stressor film portions and methods for forming the same | Ju Wen Hsiao, Ying-Min Chou, Hsiang Hsiang Ko, Ying-Lang Wang | 2015-06-23 |
| 8927406 | Dual damascene metal gate | Chun-Chieh Wang, Ying-Min Chou, Hsiang Hsiang Ko | 2015-01-06 |
| 8735255 | Method of manufacturing semiconductor device | Lai-Wan Chong, Chun-Chieh Wang, Ying-Min Chou, Hsiang Hsiang Ko, Ying-Lang Wang | 2014-05-27 |
| 6852643 | Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer | Jing-Chie Lin, Chih-Chang Tsai, Chien-Ming Lai | 2005-02-08 |