Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12389649 | Transistors with stacked semiconductor layers as channels | Tsung-Hsi Yang, Ming-Hua Yu | 2025-08-12 |
| 12363993 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Li-Wei Chou, Tsz-Mei Kwok, Ming-Hua Yu | 2025-07-15 |
| 12094778 | Fin field-effect transistor device and method of forming | Yi-Fang Pai, Pei-Ren Jeng, Chii-Horng Li, Yee-Chia Yeo | 2024-09-17 |
| 12068395 | Method for forming an undoped region under a source/drain | Meng-Ku Chen, Ji-Yin Tsai, Yi-Fang Pai, Pei-Ren Jeng, Yee-Chia Yeo +1 more | 2024-08-20 |
| 12057450 | Epitaxy regions with large landing areas for contact plugs | Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Cheng-Hsiung Yen +5 more | 2024-08-06 |
| 11948971 | Confined source/drain epitaxy regions and method forming same | Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu | 2024-04-02 |
| 11908742 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Li-Wei Chou, Tsz-Mei Kwok, Ming-Hua Yu | 2024-02-20 |
| 11652105 | Epitaxy regions with large landing areas for contact plugs | Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Cheng-Hsiung Yen +5 more | 2023-05-16 |
| 11257908 | Transistors with stacked semiconductor layers as channels | Tsung-Hsi Yang, Ming-Hua Yu | 2022-02-22 |
| 11101347 | Confined source/drain epitaxy regions and method forming same | Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu | 2021-08-24 |
| 11037826 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Li-Wei Chou, Tsz-Mei Kwok, Ming-Hua Yu | 2021-06-15 |
| 10879128 | Semiconductor device and method of forming same | Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou, Ming-Hua Yu, Chii-Horng Li | 2020-12-29 |
| 10546784 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Li-Wei Chou, Tsz-Mei Kwok, Ming-Hua Yu | 2020-01-28 |
| 10049936 | Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the same | Yi-Jing Lee, Li-Wei Chou, Tsz-Mei Kwok, Ming-Hua Yu | 2018-08-14 |
| 8871546 | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure | Lung-Han Peng, Po-Chun Yeh | 2014-10-28 |
| 8809832 | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structure | Lung-Han Peng, Po-Chun Yeh | 2014-08-19 |
| 8679883 | Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structure | Lung-Han Peng, Po-Chun Yeh | 2014-03-25 |
| 8487325 | Light emitting diode with large viewing angle and fabricating method thereof | Chen-Yen Lin, Yung-Ming Lin, Po-Chun Yeh, Chih-Ming Lai, Lung-Han Peng | 2013-07-16 |
| 8481353 | Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation | Lung-Han Peng, Po-Chun Yeh | 2013-07-09 |
| 8409892 | Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates | Lung-Han Peng, Po-Chun Yeh | 2013-04-02 |
| 7001784 | Method to control spacer width | Jyh-Shiou Hsu, Pin-Yi Hsin | 2006-02-21 |