Issued Patents All Time
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324190 | Method and multi-channel devices with anti-punch-through features | Min Jiao, Da-Wen Lin, Hung-Ju Chou | 2025-06-03 |
| 12255102 | Methods of forming of inner spacer structure using semiconductor material with variable germanium concentration | Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng | 2025-03-18 |
| 12159925 | Semiconductor device and method | Jung-Jen Chen, Pei-Ren Jeng, Chii-Horng Li, Kei-Wei Chen, Yee-Chia Yeo | 2024-12-03 |
| 12068395 | Method for forming an undoped region under a source/drain | Meng-Ku Chen, Jeng-Wei Yu, Yi-Fang Pai, Pei-Ren Jeng, Yee-Chia Yeo +1 more | 2024-08-20 |
| 11862709 | Inner spacer structure and methods of forming such | Che-Lun Chang, Jiun-Ming Kuo, Yuan-Ching Peng | 2024-01-02 |
| 11616133 | Fin field-effect transistor device and method | Che-Lun Chang, Shiao-Shin Cheng, Yu-Lin Tsai, Hsin-Chieh Huang, Ming-Yuan Wu +4 more | 2023-03-28 |
| 11437497 | Semiconductor device and method | Jung-Jen Chen, Pei-Ren Jeng, Chii-Horng Li, Kei-Wei Chen, Yee-Chia Yeo | 2022-09-06 |
| 11316030 | Fin field-effect transistor device and method | Che-Lun Chang, Shiao-Shin Cheng, Yu-Lin Tsai, Hsin-Chieh Huang, Ming-Yuan Wu +4 more | 2022-04-26 |
| 9887290 | Silicon germanium source/drain regions | Yao-Tsung Huang, Chih-Hsin Ko, Clement Hsingjen Wann | 2018-02-06 |
| 8962400 | In-situ doping of arsenic for source and drain epitaxy | Yao-Tsung Huang, Chih-Hsin Ko, Clement Hsingjen Wann | 2015-02-24 |
| 8878302 | Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer | Chao-Ching Cheng, Cheng-Hsien Wu, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-11-04 |
| 8866188 | Semiconductor devices and methods of manufacture thereof | Yao-Tsung Huang, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-10-21 |
| 8785285 | Semiconductor devices and methods of manufacture thereof | Yao-Tsung Huang, Chih-Hsin Ko, Clement Hsingjen Wann | 2014-07-22 |