Issued Patents All Time
Showing 26–50 of 116 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11695063 | Method of forming shaped source/drain epitaxial layers of a semiconductor device | Yi-Jing Lee | 2023-07-04 |
| 11688807 | Semiconductor device and methods of forming | Hung-Tai Chang, Han-Yu Tang, Yee-Chia Yeo | 2023-06-27 |
| 11652105 | Epitaxy regions with large landing areas for contact plugs | Jung-Chi Tai, Yi-Fang Pai, Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu +5 more | 2023-05-16 |
| 11574916 | Semiconductor device and manufacturing method thereof | Yi-Jing Lee, Tsz-Mei Kwok, Kun-Mu Li | 2023-02-07 |
| 11569084 | Method for manufacturing semiconductor structure with reduced nodule defects | Che-Yu Lin, Chih-Chiang Chang, Chien-Hung Chen, Tsung-Hsi Yang, Ting-Yi HUANG +2 more | 2023-01-31 |
| 11532731 | Semiconductor devices and methods of manufacture | Wei Yang | 2022-12-20 |
| 11489074 | Semiconductor device and manufacturing method thereof | Kun-Mu Li, Tsz-Mei Kwok, Chan-Lon Yang | 2022-11-01 |
| 11456360 | Epitaxial growth methods and structures thereof | Tetsuji Ueno, Chan-Lon Yang | 2022-09-27 |
| 11444181 | Source/drain formation with reduced selective loss defects | Chih-Chiang Chang, Li-Li Su | 2022-09-13 |
| 11355500 | Static random access memory cell and manufacturing method thereof | Yi-Jing Lee, Tsz-Mei Kwok, Kun-Mu Li | 2022-06-07 |
| 11315837 | Semiconductor device and method | Yi-Jing Lee, Tsung-Hsi Yang | 2022-04-26 |
| 11276692 | Manufacturing method of integrated circuit | Yi-Jing Lee, Kun-Mu Li, Tsz-Mei Kwok | 2022-03-15 |
| 11276693 | FinFET device having flat-top epitaxial features and method of making the same | Yi-Jing Lee, Li-Wei Chou | 2022-03-15 |
| 11257951 | Method of making semiconductor device having first and second epitaxial materials | Lilly Su, Chii-Horng Li, Pang-Yen Tsai, Tze-Liang Lee, Yen-Ru Lee | 2022-02-22 |
| 11257908 | Transistors with stacked semiconductor layers as channels | Tsung-Hsi Yang, Jeng-Wei Yu | 2022-02-22 |
| 11211676 | Multi-resonator filters | Zhifu Zhou | 2021-12-28 |
| 11211477 | FinFETs having epitaxial capping layer on fin and methods for forming the same | Chih-Pin Tsao, Hou-Yu Chen | 2021-12-28 |
| 11107921 | Source/drain recess in a semiconductor device | Eric Peng, Chao-Cheng Chen, Chii-Horng Li, Shih-Hao Lo, Syun-Ming Jang +2 more | 2021-08-31 |
| 11101347 | Confined source/drain epitaxy regions and method forming same | Jeng-Wei Yu, Tsz-Mei Kwok, Tsung-Hsi Yang, Li-Wei Chou | 2021-08-24 |
| 11056578 | Method of forming shaped source/drain epitaxial layers of a semiconductor device | Yi-Jing Lee | 2021-07-06 |
| 11049954 | Fin field-effect transistors and methods of forming the same | Yi-Jing Lee | 2021-06-29 |
| 11037826 | Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the same | Yi-Jing Lee, Jeng-Wei Yu, Li-Wei Chou, Tsz-Mei Kwok | 2021-06-15 |
| 11031398 | Structure and method for semiconductor device | Yi-Jing Lee, Tsz-Mei Kwok | 2021-06-08 |
| 10879128 | Semiconductor device and method of forming same | Tsz-Mei Kwok, Tsung-Hsi Yang, Jeng-Wei Yu, Li-Wei Chou, Chii-Horng Li | 2020-12-29 |
| 10861975 | FinFET with rounded source/drain profile | Chih-Pin Tsao, Pei-Ren Jeng, Tze-Liang Lee | 2020-12-08 |