Issued Patents All Time
Showing 1–25 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433008 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2025-09-30 |
| 12432963 | Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer | Su-Hao Liu, Kuo-Ju Chen, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen +4 more | 2025-09-30 |
| 12408315 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2025-09-02 |
| 12376351 | Self-aligned contact air gap formation | Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen | 2025-07-29 |
| 12376357 | Fin field-effect transistor device and method | Sai-Hooi Yeong, Chi On Chui | 2025-07-29 |
| 12362187 | Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure | Jyh-Cherng Sheu, Sung-Li Wang, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong | 2025-07-15 |
| 12324202 | Semiconductor device structure and method for forming the same | Shih-Che Lin, Po-Yu Huang, Shih-Chieh Wu, I-Wen Wu, Chen-Ming Lee +2 more | 2025-06-03 |
| 12237231 | FINFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Chia-Ta Yu, Sai-Hooi Yeong, Feng-Cheng Yang | 2025-02-25 |
| 12218138 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2025-02-04 |
| 12165925 | Fin field effect transistor having airgap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2024-12-10 |
| 12119259 | Transistor gate contacts and methods of forming the same | Sai-Hooi Yeong, Chi On Chui | 2024-10-15 |
| 12087621 | Air gaps in memory array structures | Sheng-Chen Wang, Sai-Hooi Yeong, Chia-Ta Yu, Han-Jong Chia | 2024-09-10 |
| 12080769 | Contact structure with silicide and method for forming the same | Shih-Che Lin, Po-Yu Huang, Shih-Chieh Wu, I-Wen Wu, Chen-Ming Lee +2 more | 2024-09-03 |
| 12009263 | Methods of reducing parasitic capacitance in semiconductor devices | Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong | 2024-06-11 |
| 12002863 | Semiconductor device with air-gap spacers | Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Yen-Ming Chen | 2024-06-04 |
| 11968838 | Air gaps in memory array structures | Sheng-Chen Wang, Sai-Hooi Yeong, Chi On Chui | 2024-04-23 |
| 11901455 | Method of manufacturing a FinFET by implanting a dielectric with a dopant | Su-Hao Liu, Kuo-Ju Chen, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen +4 more | 2024-02-13 |
| 11901408 | Self-aligned contact air gap formation | Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen | 2024-02-13 |
| 11855182 | Low-k gate spacer and methods for forming the same | Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Sai-Hooi Yeong, Tien-I Bao +1 more | 2023-12-26 |
| 11854907 | Contact air gap formation and structures thereof | Sai-Hooi Yeong | 2023-12-26 |
| 11856743 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2023-12-26 |
| 11855097 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2023-12-26 |
| 11854868 | Scalable patterning through layer expansion process and resulting structures | Sai-Hooi Yeong, Chi On Chui | 2023-12-26 |
| 11824101 | High aspect ratio gate structure formation | Sai-Hooi Yeong, Chi On Chui, Kuan-Lun Cheng, Chih-Hao Wang | 2023-11-21 |
| 11777004 | Fin field effect transistor (FinFET) device structure and method for forming the same | I-Wen Wu, Chen-Ming Lee, Jian-Hao Chen, Fu-Kai Yang, Feng-Cheng Yang +2 more | 2023-10-03 |