Issued Patents All Time
Showing 26–50 of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11776855 | Fin field effect transistor having airgap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2023-10-03 |
| 11735471 | Semiconductor structure and method for forming the same | Chia-Ta Yu, Sai-Hooi Yeong, Yen-Chieh Huang, Feng-Cheng Yang | 2023-08-22 |
| 11735641 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2023-08-22 |
| 11682675 | Fin field-effect transistor device and method | Sai-Hooi Yeong, Chi On Chui | 2023-06-20 |
| 11610841 | Interconnect structure for semiconductor device and methods of fabrication thereof | Chia-Ta Yu, Yen-Ming Chen, Chi On Chui, Sai-Hooi Yeong | 2023-03-21 |
| 11600520 | Air gaps in memory array structures | Sheng-Chen Wang, Sai-Hooi Yeong, Chia-Ta Yu, Han-Jong Chia | 2023-03-07 |
| 11557517 | Fin field effect transistor having airgap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2023-01-17 |
| 11456295 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2022-09-27 |
| 11456383 | Semiconductor device having a contact plug with an air gap spacer | Su-Hao Liu, Kuo-Ju Chen, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen +4 more | 2022-09-27 |
| 11289583 | High aspect ratio gate structure formation | Sai-Hooi Yeong, Chi On Chui, Kuan-Lun Cheng, Chih-Hao Wang | 2022-03-29 |
| 11205724 | Self-aligned gate hard mask and method forming same | Bo-Yu Lai, Sheng-Chen Wang, Sai-Hooi Yeong, Yen-Ming Chen, Chi On Chui | 2021-12-21 |
| 11189706 | FinFET structure with airgap and method of forming the same | Chien Ning Yao, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang | 2021-11-30 |
| 11152486 | FinFET semiconductor device having source/drain contact(s) separated by airgap spacer(s) from the gate stack(s) to reduce parasitic capacitance | Cheng-Yu Yang, Wei-Yang Lee, Fu-Kai Yang, Yen-Ming Chen | 2021-10-19 |
| 11133229 | Forming transistor by selectively growing gate spacer | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Bo-Yu Lai, Bo-Cyuan Lu +4 more | 2021-09-28 |
| 11081395 | Fin field effect transistor having air gap and method for manufacturing the same | Sai-Hooi Yeong, Yu-Ming Lin, Chi On Chui | 2021-08-03 |
| 11062957 | FinFET device with wrapped-around epitaxial structure and manufacturing method thereof | Cheng-Yu Yang, Chia-Ta Yu, Sai-Hooi Yeong, Feng-Cheng Yang | 2021-07-13 |
| 11043425 | Methods of reducing parasitic capacitance in semiconductor devices | Feng-Cheng Yang, Yen-Ming Chen, Sai-Hooi Yeong | 2021-06-22 |
| 10985167 | Flexible merge scheme for source/drain epitaxy regions | Chia-Ta Yu, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Feng-Cheng Yang +1 more | 2021-04-20 |
| 10971408 | Contact air gap formation and structures thereof | Sai-Hooi Yeong | 2021-04-06 |
| 10923565 | Self-aligned contact air gap formation | Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yih-Ann Lin, Yen-Ming Chen | 2021-02-16 |
| 10861753 | Air gap formation between gate spacer and epitaxy structure | Bo-Yu Lai, Wei-Yang Lee, Feng-Cheng Yang, Yen-Ming Chen | 2020-12-08 |
| 10847634 | Field effect transistor and method of forming the same | Te-En Cheng, Chun Te Li, Tien-I Bao, Wei-Ken Lin | 2020-11-24 |
| 10833170 | Low-k gate spacer and methods for forming the same | Wen-Kai Lin, Bo-Yu Lai, Li Chun Te, Sai-Hooi Yeong, Tien-I Bao +1 more | 2020-11-10 |
| 10811262 | Semiconductor device having a uniform and thin silicide layer on an epitaxial source/ drain structure and manufacturing method thereof | Jyh-Cherng Sheu, Sung-Li Wang, Cheng-Yu Yang, Sheng-Chen Wang, Sai-Hooi Yeong | 2020-10-20 |
| 10777504 | Interconnect structure for semiconductor device and methods of fabrication thereof | Chia-Ta Yu, Yen-Ming Chen, Chi On Chui, Sai-Hooi Yeong | 2020-09-15 |