Issued Patents All Time
Showing 1–25 of 60 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12408412 | Air spacers around contact plugs and method forming same | Chen-Huang Huang, Ming-Jhe Sie, An Chyi Wei, Ryan Chia-Jen Chen | 2025-09-02 |
| 12376351 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yen-Ming Chen | 2025-07-29 |
| 12087639 | Fin field-effect transistor devices and methods of forming the same | Chih-Chang Hung, Chieh-Ning Feng, Chun-Liang Lai, Ryan Chia-Jen Chen | 2024-09-10 |
| 12068199 | Methods for forming fin field-effect transistors | Ryan Chia-Jen Chen, Chia Tai Lin, Chao-Cheng Chen | 2024-08-20 |
| 12027370 | Method of forming an integrated circuit using a patterned mask layer | Tzu-Yen Hsieh, Ming-Ching Chang, Chun-Hung Lee, De-Fang Chen, Chao-Cheng Chen | 2024-07-02 |
| 12015071 | Air spacers around contact plugs and method forming same | Chen-Huang Huang, Ming-Jhe Sie, An Chyi Wei, Ryan Chia-Jen Chen | 2024-06-18 |
| 12015030 | Gate stacks for semiconductor devices of different conductivity types | Ryan Chia-Jen Chen, Donald Y. Chao, Yi-Shien Mor, Kuo-Tai Huang | 2024-06-18 |
| 11908939 | Method of making a FinFET device including a step of recessing a subset of the fins | Chia Tai Lin, An-Shen Chang, Ryan Chia-Jen Chen, Chao-Cheng Chen | 2024-02-20 |
| 11901408 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yen-Ming Chen | 2024-02-13 |
| 11670552 | Methods for forming fin field-effect transistors | Ryan Chia-Jen Chen, Chia Tai Lin, Chao-Cheng Chen | 2023-06-06 |
| 11495501 | Fin field-effect transistor devices and methods of forming the same | Chih-Chang Hung, Chieh-Ning Feng, Chun-Liang Lai, Ryan Chia-Jen Chen | 2022-11-08 |
| 11462408 | Method of forming an integrated circuit using a patterned mask layer | Tzu-Yen Hsieh, Ming-Ching Chang, Chun-Hung Lee, De-Fang Chen, Chao-Cheng Chen | 2022-10-04 |
| 11355616 | Air spacers around contact plugs and method forming same | Chen-Huang Huang, Ming-Jhe Sie, An Chyi Wei, Ryan Chia-Jen Chen | 2022-06-07 |
| 11289481 | Single metal that performs N work function and P work function in a high-K/metal gate | Ryan Chia-Jen Chen, Donald Y. Chao, Yi-Shien Mor, Kuo-Tai Huang | 2022-03-29 |
| 11145752 | Residue removal in metal gate cutting process | Chieh-Ning Feng, Chih-Chang Hung, Bing Chen | 2021-10-12 |
| 11121255 | V-shape recess profile for embedded source/drain epitaxy | Chii-Horng Li, Chih-Shan Chen, Roger Tai, Yen-Ru Lee, Tzu-Ching Lin | 2021-09-14 |
| 11094825 | FinFET device with fins of non-uniform width | Chia Tai Lin, An-Shen Chang, Ryan Chia-Jen Chen, Chao-Cheng Chen | 2021-08-17 |
| 10991627 | Methods for forming fin field-effect transistors | Ryan Chia-Jen Chen, Chia Tai Lin, Chao-Cheng Chen | 2021-04-27 |
| 10957600 | Methods for forming Fin field-effect transistors | Ryan Chia-Jen Chen, Chia Tai Lin, Chao-Cheng Chen | 2021-03-23 |
| 10923565 | Self-aligned contact air gap formation | Kai-Hsuan Lee, Bo-Yu Lai, Sai-Hooi Yeong, Feng-Cheng Yang, Yen-Ming Chen | 2021-02-16 |
| 10916477 | Fin field-effect transistor devices and methods of forming the same | Chih-Chang Hung, Chieh-Ning Feng, Chun-Liang Lai, Ryan Chia-Jen Chen | 2021-02-09 |
| 10763366 | V-shape recess profile for embedded source/drain epitaxy | Chii-Horng Li, Chih-Shan Chen, Roger Tai, Yen-Ru Lee, Tzu-Ching Lin | 2020-09-01 |
| 10665457 | Method of forming an integrated circuit using a patterned mask layer | Tzu-Yen Hsieh, Ming-Ching Chang, Chun-Hung Lee, De-Fang Chen, Chao-Cheng Chen | 2020-05-26 |
| 10658509 | FinFET device | Chia Tai Lin, An-Shen Chang, Ryan Chia-Jen Chen, Chao-Cheng Chen | 2020-05-19 |
| 10651309 | V-shape recess profile for embedded source/drain epitaxy | Chii-Horng Li, Chih-Shan Chen, Roger Tai, Yen-Ru Lee, Tzu-Ching Lin | 2020-05-12 |