Issued Patents All Time
Showing 176–200 of 337 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6524906 | Chemical mechanical polishing of polysilicon plug using a silicon nitride stop layer | Chung-Long Chang | 2003-02-25 |
| 6518183 | Hillock inhibiting method for forming a passivated copper containing conductor layer | Weng Chang, Tien-I Bao, Ying-Ho Chen | 2003-02-11 |
| 6511887 | Method for making FET gate oxides with different thicknesses using a thin silicon nitride layer and a single oxidation step | Mo Yu | 2003-01-28 |
| 6503818 | Delamination resistant multi-layer composite dielectric layer employing low dielectric constant dielectric material | — | 2003-01-07 |
| 6500753 | Method to reduce the damages of copper lines | Ying-Ho Chen, Jih-Churng Twu, Chen-Hua Yu | 2002-12-31 |
| 6495478 | Reduction of shrinkage of poly(arylene ether) for low-K IMD | — | 2002-12-17 |
| 6483173 | Solution to black diamond film delamination problem | Lain-Jong Li, Shwangming Jeng | 2002-11-19 |
| 6479385 | Interlevel dielectric composite layer for insulation of polysilicon and metal structures | Chu-Yun Fu | 2002-11-12 |
| 6472312 | Methods for inhibiting microelectronic damascene processing induced low dielectric constant dielectric layer physical degradation | Tien-I Bao, Weng Chang | 2002-10-29 |
| 6458689 | Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish | Chen-Hua Yu, Tsu Shih, Anthony Yen, Jih-Chuyng Twu | 2002-10-01 |
| 6455417 | Method for forming damascene structure employing bi-layer carbon doped silicon nitride/carbon doped silicon oxide etch stop layer | Tien-I Bao | 2002-09-24 |
| 6444371 | Prevention of die loss to chemical mechanical polishing | Jui-Yu Chang, Chen-Hua Yu, Chung-Long Chang, Tsu Shih, Jeng-Horng Chen | 2002-09-03 |
| 6436771 | Method of forming a semiconductor device with multiple thickness gate dielectric layers | Chen-Hua Yu, Mong-Song Liang | 2002-08-20 |
| 6429118 | Elimination of electrochemical deposition copper line damage for damascene processing | Ying-Ho Chen, Jih-Churng Twu, Tsu Shih | 2002-08-06 |
| 6422929 | Polishing pad for a linear polisher and method for forming | Ying-Ho Chen | 2002-07-23 |
| 6423625 | Method of improving the bondability between Au wires and Cu bonding pads | Mong-Song Liang, Chen-Hua Yu, Chung-Shi Liu, Jane-Bai Lai | 2002-07-23 |
| 6424038 | Low dielectric constant microelectronic conductor structure with enhanced adhesion and attenuated electrical leakage | Tien-I Bao | 2002-07-23 |
| 6423653 | Reduction of plasma damage for HDP-CVD PSG process | Chu-Yun Fu | 2002-07-23 |
| 6417071 | Sub-atmospheric pressure thermal chemical vapor deposition (SACVD) trench isolation method with attenuated surface sensitivity | — | 2002-07-09 |
| 6417106 | Underlayer liner for copper damascene in low k dielectric | Jih-Churng Twu, Ying-Ho Chen, Tsu Shih | 2002-07-09 |
| 6409587 | Dual-hardness polishing pad for linear polisher and method for fabrication | Tsu Shih, Ying-Ho Chen, Wen-Chih Chiou | 2002-06-25 |
| 6407013 | Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties | Lain-Jong Li, Tien-I Bao, Cheng-Chung Lin | 2002-06-18 |
| 6403432 | Hardmask for a salicide gate process with trench isolation | Chen-Hua Yu | 2002-06-11 |
| 6398627 | Slurry dispenser having multiple adjustable nozzles | Wen-Chih Chiou, Ying-Ho Chen, Tsu Shih | 2002-06-04 |
| 6391777 | Two-stage Cu anneal to improve Cu damascene process | Ying-Ho Chen | 2002-05-21 |