Issued Patents All Time
Showing 1,776–1,800 of 1,955 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6726535 | Method for preventing localized Cu corrosion during CMP | Tsu Shih, Kuan-Ku Hung | 2004-04-27 |
| 6706637 | Dual damascene aperture formation method absent intermediate etch stop layer | Yu-Huei Chen, Yao-Yi Cheng, Sung-Ming Jang | 2004-03-16 |
| 6706577 | Formation of dual gate oxide by two-step wet oxidation | Jih-Churng Twu, Syun-Ming Jang | 2004-03-16 |
| 6703286 | Metal bond pad for low-k inter metal dielectric | Chung-Shi Liu | 2004-03-09 |
| 6686280 | Sidewall coverage for copper damascene filling | Shau-Lin Shue, Mei-Yun Wang | 2004-02-03 |
| 6682396 | Apparatus and method for linear polishing | Tsu Shih | 2004-01-27 |
| 6672941 | Method and apparatus for chemical/mechanical planarization (CMP) of a semiconductor substrate having shallow trench isolation | Syun-Ming Jang | 2004-01-06 |
| 6657284 | Graded dielectric layer and method for fabrication thereof | Lain-Jong Li, Shwang-Ming Jeng, Syun-Ming Jang | 2003-12-02 |
| 6599847 | Sandwich composite dielectric layer yielding improved integrated circuit device reliability | Syun-Ming Jang | 2003-07-29 |
| 6586331 | Low sheet resistance of titanium salicide process | Chung-Shi Liu | 2003-07-01 |
| 6562712 | Multi-step planarizing method for forming a patterned thermally extrudable material layer | Chung-Shi Liu | 2003-05-13 |
| 6562725 | Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers | Ming-Hsing Tsai, Ching-Hua Hsieh, Shau-Lin Shue | 2003-05-13 |
| 6559040 | Process for polishing the top surface of a polysilicon gate | Chung-Long Chang, Syun-Ming Jang | 2003-05-06 |
| 6544882 | Method to improve reliability of multilayer structures of FSG (F-doped SiO2) dielectric layers and aluminum-copper-TiN layers in integrated circuits | Chung-Shi Liu, Shau-Lin Shue | 2003-04-08 |
| 6500770 | Method for forming a multi-layer protective coating over porous low-k material | Yu-Huei Cheng | 2002-12-31 |
| 6501186 | Bond pad having variable density via support and method for fabrication | Tsu Shih | 2002-12-31 |
| 6500753 | Method to reduce the damages of copper lines | Syun-Ming Jang, Ying-Ho Chen, Jih-Churng Twu | 2002-12-31 |
| 6500749 | Method to improve copper via electromigration (EM) resistance | Chung-Shi Liu, Shau-Lin Shue | 2002-12-31 |
| 6492269 | Methods for edge alignment mark protection during damascene electrochemical plating of copper | Chung-Shi Liu, Shau-Lin Shue, Ching-Hua Hsieh | 2002-12-10 |
| 6465323 | Method for forming semiconductor integrated circuit microelectronic fabrication having multiple gate dielectric layers with multiple thicknesses | Mo Yu, Shih-Chang Chen | 2002-10-15 |
| 6458689 | Use of PE-SiON or PE-Oxide for contact or via photo and for defect reduction with oxide and w chemical-mechanical polish | Syun-Ming Jang, Tsu Shih, Anthony Yen, Jih-Chuyng Twu | 2002-10-01 |
| 6444371 | Prevention of die loss to chemical mechanical polishing | Syun-Ming Jang, Jui-Yu Chang, Chung-Long Chang, Tsu Shih, Jeng-Horng Chen | 2002-09-03 |
| 6436771 | Method of forming a semiconductor device with multiple thickness gate dielectric layers | Syun-Ming Jang, Mong-Song Liang | 2002-08-20 |
| 6424021 | Passivation method for copper process | Chung-Shi Liu | 2002-07-23 |
| 6423625 | Method of improving the bondability between Au wires and Cu bonding pads | Syun-Ming Jang, Mong-Song Liang, Chung-Shi Liu, Jane-Bai Lai | 2002-07-23 |