Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11520953 | Predicting etch characteristics in thermal etching and atomic layer etching | Thorsten Lill, Andreas Fischer, Ivan L. Berry, III, Richard A. Gottscho | 2022-12-06 |
| 10847375 | Selective atomic layer etching | Chia-Chun Wang, Eric A. Hudson, Andrew Clark Serino, Zhonghao Zhang | 2020-11-24 |
| 10354887 | Atomic layer etching of metal oxide | Andreas Fischer | 2019-07-16 |
| 10049921 | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor | Kaihan Ashtiani, Deenesh Padhi, Derek Wong, Bart J. van Schravendijk, George Andrew Antonelli +3 more | 2018-08-14 |
| 9988715 | Interface engineering during MGO deposition for magnetic tunnel junctions | Katie Lynn Nardi | 2018-06-05 |
| 9847222 | Treatment for flowable dielectric deposition on substrate surfaces | Patrick Reilly, Harald te Nijenhuis, Bart J. van Schravendijk, Nicholas Muga Ndiege | 2017-12-19 |
| 9627608 | Dielectric repair for emerging memory devices | Thorsten Lill, Diane Hymes | 2017-04-18 |
| 9299559 | Flowable oxide film with tunable wet etch rate | Karena Shannon, Bart van Schravendijk, Kaihan Ashtiani | 2016-03-29 |
| 9257302 | CVD flowable gap fill | Feng Wang, Victor Lu, Brian Lu, Wai-Fan Yau, Vishal Gauri +4 more | 2016-02-09 |
| 9245739 | Low-K oxide deposition by hydrolysis and condensation | Nicholas Muga Ndiege, Krishna Nittala, Derek Wong, George Andrew Antonelli, Patrick A. Van Cleemput | 2016-01-26 |
| 9064684 | Flowable oxide deposition using rapid delivery of process gases | Collin Kwok Leung Mui, Lakshminarayana Nittala | 2015-06-23 |
| 8846536 | Flowable oxide film with tunable wet etch rate | Karena Shannon, Bart van Schravendijk, Kaihan Ashtiani | 2014-09-30 |
| 8728958 | Gap fill integration | Kaihan Ashtiani, Michael Wood, John Drewery, Naohiro Shoda, Bart van Schravendijk +1 more | 2014-05-20 |
| 8685867 | Premetal dielectric integration process | Michal Danek, Bart van Schravendijk, Lakshminarayana Nittala | 2014-04-01 |
| 8278216 | Selective capping of copper | Glenn B. Alers, Michael Carolus | 2012-10-02 |
| 8278224 | Flowable oxide deposition using rapid delivery of process gases | Collin Kwok Leung Mui, Lakshminarayana Nittala | 2012-10-02 |
| 8187951 | CVD flowable gap fill | Feng Wang, Victor Lu, Brian Lu, Wai-Fan Yau | 2012-05-29 |
| 8062983 | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles | Gary W. Ray | 2011-11-22 |
| 8058179 | Atomic layer removal process with higher etch amount | Harald te Nijenhuis, Henner Meinhold, Bart J. van Schravendijk, Lakshmi Nittala | 2011-11-15 |
| 7972976 | VLSI fabrication processes for introducing pores into dielectric materials | Willibrordus Gerardus Maria van den Hoek, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary W. Ray | 2011-07-05 |
| 7629224 | VLSI fabrication processes for introducing pores into dielectric materials | Willibrordus Gerardus Maria van den Hoek, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary W. Ray | 2009-12-08 |
| 7629227 | CVD flowable gap fill | Feng Wang, Victor Lu, Brian Lu, Wai-Fan Yau | 2009-12-08 |
| 7510982 | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles | Gary W. Gray | 2009-03-31 |
| 7166531 | VLSI fabrication processes for introducing pores into dielectric materials | Willibrordus Gerardus Maria van den Hoek, Raashina Humayun, Richard S. Hill, Jianing Sun, Gary W. Ray | 2007-01-23 |
| 7107998 | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus | Harold Frank Greer, James A. Fair, Junghwan Sung | 2006-09-19 |