Issued Patents All Time
Showing 301–325 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8901537 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more | 2014-12-02 |
| 8883573 | Isolation for nanowire devices | Uday Shah, Benjamin Chu-Kung, Been-Yih Jin, Ravi Pillarisetty, Marko Radosavljevic | 2014-11-11 |
| 8872225 | Defect transferred and lattice mismatched epitaxial film | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2014-10-28 |
| 8853067 | Method of isolating nanowires from a substrate | Benjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Been-Yin Jin, Marko Radosavljevic | 2014-10-07 |
| 8809836 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more | 2014-08-19 |
| 8785907 | Epitaxial film growth on patterned substrate | Niti Goel, Niloy Mukherjee, Seung Hoon Sung, Van H. Le, Matthew V. Metz +11 more | 2014-07-22 |
| 8765563 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more | 2014-07-01 |
| 8753942 | Silicon and silicon germanium nanowire structures | Kelin J. Kuhn, Seiyon Kim, Rafael Rios, Stephen M. Cea, Martin D. Giles +3 more | 2014-06-17 |
| 8748940 | Semiconductor devices with germanium-rich active layers and doped transition layers | Van H. Le, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich | 2014-06-10 |
| 8716751 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Matthew V. Metz +6 more | 2014-05-06 |
| 8710490 | Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer | Ravi Pillarisetty, Niti Goel, Han Wui Then, Van H. Le, Marko Radosavljevic +2 more | 2014-04-29 |
| 8686517 | Self-aligned insulating etchstop layer on a metal contact | James M. Blackwell | 2014-04-01 |
| 8674448 | Trigate static random-access memory with independent source and drain engineering, and devices made therefrom | Ravi Pillarisetty, Brian S. Doyle, Robert S. Chau | 2014-03-18 |
| 8633471 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Jack T. Kavalieros | 2014-01-21 |
| 8629039 | Substrate fins with different heights | Justin S. Sandford, Michael K. Harper | 2014-01-14 |
| 8592803 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yin Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2013-11-26 |
| 8575596 | Non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2013-11-05 |
| 8575653 | Non-planar quantum well device having interfacial layer and method of forming same | Ravi Pillarisetty, Van H. Le, Robert S. Chau | 2013-11-05 |
| 8525162 | Method of isolating nanowires from a substrate | Benjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Been-Yih Jin, Marko Radosavljevic | 2013-09-03 |
| 8441074 | Substrate fins with different heights | Justin S. Sandford, Michael K. Harper | 2013-05-14 |
| 8377771 | Recessed workfunction metal in CMOS transistor gates | Brian McIntrye, Michael K. Harper, Subhash M. Joshi | 2013-02-19 |
| 8368052 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Jack T. Kavalieros +2 more | 2013-02-05 |
| 8361871 | Trigate static random-access memory with independent source and drain engineering, and devices made therefrom | Ravi Pillarisetty, Brian S. Doyle, Robert S. Chau | 2013-01-29 |
| 8344418 | Materials for interfacing high-K dielectric layers with III-V semiconductors | Marko Radosavljevic, Gilbert Dewey, Robert S. Chau | 2013-01-01 |
| 8294223 | Metal gate structure and method of manufacturing same | Soley Ozer, Jason W. Klaus | 2012-10-23 |