Issued Patents All Time
Showing 326–350 of 360 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8283653 | Non-planar germanium quantum well devices | Ravi Pillarisetty, Jack T. Kavalieros, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2012-10-09 |
| 8269209 | Isolation for nanowire devices | Uday Shah, Benjamin Chu-Kung, Been-Yih Jin, Ravi Pillarisetty, Marko Radosavljevic | 2012-09-18 |
| 8264048 | Multi-gate device having a T-shaped gate structure | Uday Shah, Jack T. Kavalieros | 2012-09-11 |
| 8193523 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Jack T. Kavalieros +5 more | 2012-06-05 |
| 8193641 | Recessed workfunction metal in CMOS transistor gates | Brian McIntyre, Michael K. Harper, Subhash M. Joshi | 2012-06-05 |
| 8168508 | Method of isolating nanowires from a substrate | Benjamin Chu-Kung, Uday Shah, Ravi Pillarisetty, Been-Yih Jin, Marko Radosavljevic | 2012-05-01 |
| 8106440 | Selective high-k dielectric film deposition for semiconductor device | Marko Radosavljevic, Mantu K. Hudait, Matthew V. Metz | 2012-01-31 |
| 8088665 | Method of forming self-aligned low resistance contact layer | Jason W. Klaus, Ravi Pillarisetty, Niloy Mukherjee, Jack T. Kavalieros, Sean King | 2012-01-03 |
| 8022487 | Increasing body dopant uniformity in multi-gate transistor devices | Ravi Pillarisetty, Jack T. Kavalieros, Titash Rakshit, Gilbert Dewey | 2011-09-20 |
| 8017933 | Compositionally-graded quantum-well channels for semiconductor devices | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Titash Rakshit | 2011-09-13 |
| 7968457 | Sandwiched metal structure silicidation for enhanced contact | Niloy Mukherjee, Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros, Robert S. Chau | 2011-06-28 |
| 7915642 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Gilbert Dewey, Jack T. Kavalieros | 2011-03-29 |
| 7888220 | Self-aligned insulating etchstop layer on a metal contact | James M. Blackwell | 2011-02-15 |
| 7884354 | Germanium on insulator (GOI) semiconductor substrates | Ravi Pillarisetty, Been-Yih Jin, Marko Radosavljevic | 2011-02-08 |
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer | James M. Blackwell, Suman Datta, Jack T. Kavalieros, Mantu K. Hudait | 2011-02-01 |
| 7875519 | Metal gate structure and method of manufacturing same | Soley Ozer, Jason W. Klaus | 2011-01-25 |
| 7851790 | Isolated Germanium nanowire on Silicon fin | Been-Yih Jin, Ravi Pillarisetty, Robert S. Chau | 2010-12-14 |
| 7838373 | Replacement spacers for MOSFET fringe capacitance reduction and processes of making same | Martin D. Giles, Titash Rakshit, Lucian Shifren, Jack T. Kavalieros | 2010-11-23 |
| 7833887 | Notched-base spacer profile for non-planar transistors | Jack T. Kavalieros | 2010-11-16 |
| 7821044 | Transistor with improved tip profile and method of manufacture thereof | Mark Bohr, Steven J. Keating, Thomas A. Letson, Anand S. Murthy, Donald W. O'Neill | 2010-10-26 |
| 7816218 | Selective deposition of amorphous silicon films on metal gates | Jason W. Klaus, Sean King | 2010-10-19 |
| 7776729 | Transistor, method of manufacturing same, etchant for use during manufacture of same, and system containing same | Vijay Ramachandrarao, Oleg Golonzka, Arnel M. Fajardo | 2010-08-17 |
| 7768079 | Transistors with high-k dielectric spacer liner to mitigate lateral oxide encroachement | Justin S. Sandford | 2010-08-03 |
| 7763317 | High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces | James M. Blackwell, Gregory J. Kearns, Darryl J. Morrison | 2010-07-27 |
| 7741230 | Highly-selective metal etchants | Jack T. Kavalieros, Mark Liu, Mark L. Doczy | 2010-06-22 |