Issued Patents All Time
Showing 501–525 of 534 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7268049 | Structure and method for manufacturing MOSFET with super-steep retrograded island | Effendi Leobandung, Anda C. Mocuta, Dan M. Mocuta | 2007-09-11 |
| 7262087 | Dual stressed SOI substrates | Dureseti Chidambarrao, Bruce B. Doris, Oleg Gluschenkov, Omer H. Dokumaci | 2007-08-28 |
| 7262084 | Methods for manufacturing a finFET using a conventional wafer and apparatus manufactured therefrom | Bruce B. Doris | 2007-08-28 |
| 7256081 | Structure and method to induce strain in a semiconductor device channel with stressed film under the gate | Haining Yang | 2007-08-14 |
| 7253482 | Structure for reducing overlap capacitance in field effect transistors | Oleg Gluschenkov | 2007-08-07 |
| 7247547 | Method of fabricating a field effect transistor having improved junctions | Oleg Gluschenkov, Chun-Yung Sung | 2007-07-24 |
| 7244644 | Undercut and residual spacer prevention for dual stressed layers | Brian L. Tessier, Huicai Zhong, Ying Li | 2007-07-17 |
| 7224033 | Structure and method for manufacturing strained FINFET | Bruce B. Doris | 2007-05-29 |
| 7223994 | Strained Si on multiple materials for bulk or SOI substrates | Dureseti Chidambarrao, Omer H. Dokumaci, Oleg Gluschenkov | 2007-05-29 |
| 7224021 | MOSFET with high angle sidewall gate and contacts for reduced miller capacitance | Dureseti Chidambarrao, Lawrence A. Clevenger, Omer H. Dokumaci, Kaushik A. Kumar | 2007-05-29 |
| 7220626 | Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levels | Bruce B. Doris, Philip J. Oldiges, Meikei Ieong, Min Yang, Huajie Chen | 2007-05-22 |
| 7220662 | Fully silicided field effect transistors | Sunfei Fang, Zhijiong Luo | 2007-05-22 |
| 7211490 | Ultra thin channel MOSFET | Bruce B. Doris, Thomas S. Kanarsky, Ying Zhang, Meikei Ieong, Omer H. Dokumaci | 2007-05-01 |
| 7202132 | Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs | Bruce B. Doris, Dan M. Mocuta | 2007-04-10 |
| 7183613 | Method and structure for enhancing both NMOSFET and PMOSFET performance with a stressed film | Jing Wang, Bruce B. Doris, Zhibin Ren | 2007-02-27 |
| 7173312 | Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification | Cyril Cabral, Jr., Bruce B. Doris, Thomas S. Kanarsky, Xiao Hu Liu | 2007-02-06 |
| 7163867 | Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom | Kam-Leung Lee | 2007-01-16 |
| 7118999 | Method and apparatus to increase strain effect in a transistor channel | Haining Yang | 2006-10-10 |
| 7105440 | Self-forming metal silicide gate for CMOS devices | Zhijiong Luo, Sunfei Fang | 2006-09-12 |
| 7106096 | Circuit and method of controlling integrated circuit power consumption using phase change switches | Hon-Sum Philip Wong, Xinlin Wang, David R. Hanson | 2006-09-12 |
| 7098536 | Structure for strained channel field effect transistor pair having a member and a contact via | Haining Yang, Clement Wann | 2006-08-29 |
| 7098477 | Structure and method of manufacturing a finFET device having stacked fins | Bruce B. Doris | 2006-08-29 |
| 7094634 | Structure and method for manufacturing planar SOI substrate with multiple orientations | Bruce B. Doris, Meikei Ieong, Phillip J. Oldiges, Min Yang | 2006-08-22 |
| 7091566 | Dual gate FinFet | Jochen Beintner, Bruce B. Doris, Ying Zhang | 2006-08-15 |
| 7087952 | Dual function FinFET, finmemory and method of manufacture | Bruce B. Doris, Jochen Beintner | 2006-08-08 |