Issued Patents All Time
Showing 426–450 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9406570 | FinFET device | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2016-08-02 |
| 9406548 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert | 2016-08-02 |
| 9391074 | Structure for FinFET fins | Effendi Leobandung | 2016-07-12 |
| 9391152 | Implantation formed metal-insulator-semiconductor (MIS) contacts | Chia-Yu Chen, Zuoguang Liu, Chun-Chen Yeh | 2016-07-12 |
| 9390981 | Method of forming a complementary metal oxide semiconductor structure with N-type and P-type field effect transistors having symmetric source/drain junctions and optional dual silicides | Veeraraghavan S. Basker, Andres Bryant | 2016-07-12 |
| 9385050 | Structure and method to fabricate resistor on finFET processes | Wilfried E. Haensch, Pranita Kulkarni | 2016-07-05 |
| 9373697 | Spacer replacement for replacement metal gate semiconductor devices | Sanjay C. Mehta, Shom Ponoth, Muthumanickam Sankarapandian, Theodorus E. Standaert | 2016-06-21 |
| 9373550 | Selectively degrading current resistance of field effect transistor devices | Veeraraghavan S. Basker, Effendi Leobandung, Dieter Wendel | 2016-06-21 |
| 9368343 | Reduced external resistance finFET device | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert | 2016-06-14 |
| 9368591 | Transistors comprising doped region-gap-doped region structures and methods of fabrication | Steven Bentley, Ajey Poovannummoottil Jacob, Chia-Yu Chen | 2016-06-14 |
| 9368569 | Punch through stopper for semiconductor device | Effendi Leobandung | 2016-06-14 |
| 9368350 | Tone inverted directed self-assembly (DSA) fin patterning | Hong He, Chi-Chun Liu, Alexander Reznicek, Chiahsun Tseng | 2016-06-14 |
| 9362407 | Symmetrical extension junction formation with low-K spacer and dual epitaxial process in FinFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2016-06-07 |
| 9362177 | Nanowire semiconductor device | Wilfried Haensch, Effendi Leobandung | 2016-06-07 |
| 9355921 | Test macro for use with a multi-patterning lithography process | Chun-Chen Yeh, Jin Cho, Hui Zang | 2016-05-31 |
| 9349863 | Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet | Veeraraghavan S. Basker, Krishna Iyengar, Chun-Chen Yeh | 2016-05-24 |
| 9349838 | Semiconductor structure with deep trench thermal conduction | Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert | 2016-05-24 |
| 9337317 | Semiconductor device including finFET and diode having reduced defects in depletion region | Veeraraghavan S. Basker | 2016-05-10 |
| 9331177 | Semiconductor structure with deep trench thermal conduction | Kangguo Cheng, Balasubramanian Pranatharthi Haran, Junjun Li, Shom Ponoth, Theodorus E. Standaert | 2016-05-03 |
| 9331146 | Silicon nanowire formation in replacement metal gate process | Chia-Yu Chen, Zuoguang Liu | 2016-05-03 |
| 9330984 | CMOS fin integration on SOI substrate | Effendi Leobandung | 2016-05-03 |
| 9324842 | Buried local interconnect in finfet structure and method of fabricating same | Hui Zang, Chun-Chen Yeh, Veeraraghavan S. Basker | 2016-04-26 |
| 9312136 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2016-04-12 |
| 9312143 | Formation of isolation surrounding well implantation | Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert | 2016-04-12 |
| 9293459 | Method and structure for improving finFET with epitaxy source/drain | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-03-22 |