Issued Patents All Time
Showing 451–475 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9293464 | Structure to enhance gate induced strain effect in multigate devices | Veeraraghavan S. Basker, Pranita Kerber, Junli Wang, Chun-Chen Yeh | 2016-03-22 |
| 9281303 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Theodorus E. Standaert | 2016-03-08 |
| 9281381 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Bruce B. Doris, Ali Khakifirooz, Chun-Chen Yeh | 2016-03-08 |
| 9275911 | Hybrid orientation fin field effect transistor and planar field effect transistor | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2016-03-01 |
| 9269629 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert | 2016-02-23 |
| 9269627 | Fin cut on SIT level | Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek | 2016-02-23 |
| 9269792 | Method and structure for robust finFET replacement metal gate integration | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan, Theodorus E. Standaert | 2016-02-23 |
| 9263554 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Shogo Mochizuki, Chun-Chen Yeh | 2016-02-16 |
| 9257537 | Finfet including improved epitaxial topology | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2016-02-09 |
| 9257350 | Manufacturing process for finFET device | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2016-02-09 |
| 9252242 | Semiconductor structure with deep trench thermal conduction | Theodorus E. Standaert, Kangguo Cheng, Junjun Li, Balasubramanian Pranatharthi Haran, Shom Ponoth | 2016-02-02 |
| 9252044 | Shallow trench isolation for end fin variation control | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2016-02-02 |
| 9252145 | Independent gate vertical FinFET structure | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2016-02-02 |
| 9246005 | Stressed channel bulk fin field effect transistor | Veeraraghavan S. Basker, Akira Hokazono, Hiroshi Itokawa, Chun-Chen Yeh | 2016-01-26 |
| 9224654 | Fin capacitor employing sidewall image transfer | Kangguo Cheng, Ramachandra Divakaruni, Shom Ponoth, Theodorus E. Standaert | 2015-12-29 |
| 9219068 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-12-22 |
| 9214378 | Undercut insulating regions for silicon-on-insulator device | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-12-15 |
| 9196612 | Semiconductor device including merged-unmerged work function metal and variable fin pitch | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2015-11-24 |
| 9190328 | Formation of fins having different heights in fin field effect transistors | Veeraraghavan S. Basker, Chun-Chen Yeh | 2015-11-17 |
| 9190465 | FinFET device | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-11-17 |
| 9190466 | Independent gate vertical FinFET structure | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2015-11-17 |
| 9177810 | Dual silicide regions and method for forming the same | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2015-11-03 |
| 9178019 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert | 2015-11-03 |
| 9171927 | Spacer replacement for replacement metal gate semiconductor devices | Sanjay C. Mehta, Shom Ponoth, Muthumanickam Sankarapandian, Theodorus E. Standaert | 2015-10-27 |
| 9159633 | Test macro for use with a multi-patterning lithography process | Chun-Chen Yeh, Jin Cho, Hui Zang | 2015-10-13 |