Issued Patents All Time
Showing 476–500 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9105742 | Dual epitaxial process including spacer adjustment | Veeraraghavan S. Basker, Jeffrey B. Johnson, Chun-Chen Yeh | 2015-08-11 |
| 9105559 | Conformal doping for FinFET devices | Veeraraghavan S. Basker, Nathaniel Berliner, Hyun-Jin Cho, Johnathan E. Faltermeier, Kam-Leung Lee | 2015-08-11 |
| 9093564 | Integrated passive devices for FinFET technologies | Kangguo Cheng, Thomas N. Adam, Balasubramanian Pranatharthi Haran, Shom Ponoth, Theodorus E. Standaert | 2015-07-28 |
| 9082873 | Method and structure for finFET with finely controlled device width | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-07-14 |
| 9064885 | Electrostatic discharge resistant diodes | Huiming Bu, Robert J. Gauthier, Jr., Terence B. Hook, Effendi Leobandung | 2015-06-23 |
| 9059287 | Semiconductor device including finfet and diode having reduced defects in depletion region | Veeraraghavan S. Basker | 2015-06-16 |
| 9059043 | Fin field effect transistor with self-aligned source/drain regions | Effendi Leobandung | 2015-06-16 |
| 9054124 | Electrostatic discharge resistant diodes | Huiming Bu, Robert J. Gauthier, Jr., Terence B. Hook, Effendi Leobandung | 2015-06-09 |
| 9018052 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz +2 more | 2015-04-28 |
| 9018686 | Dual gate finFET devices | Veeraraghavan S. Basker, Effendi Leobandung | 2015-04-28 |
| 9012997 | Semiconductor device including ESD protection device | Terence B. Hook, Veeraraghavan S. Basker, Chun-Chen Yeh | 2015-04-21 |
| 8999795 | Asymmetrical replacement metal gate field effect transistor | Veeraraghavan S. Basker, Chun-Chen Yeh | 2015-04-07 |
| 9000522 | FinFET with dielectric isolation by silicon-on-nothing and method of fabrication | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-04-07 |
| 8999774 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-04-07 |
| 8994085 | Integrated circuit including DRAM and SRAM/logic | Veeraraghavan S. Basker, Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Ali Khakifirooz +2 more | 2015-03-31 |
| 8993382 | Bulk fin-field effect transistors with well defined isolation | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-03-31 |
| 8987837 | Stress enhanced finFET devices | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert | 2015-03-24 |
| 8987790 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert | 2015-03-24 |
| 8969963 | Vertical source/drain junctions for a finFET including a plurality of fins | Veeraraghavan S. Basker, Effendi Leobandung, Chun-Chen Yeh | 2015-03-03 |
| 8951870 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Bruce B. Doris, Ali Khakifirooz, Chun-Chen Yeh | 2015-02-10 |
| 8946792 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert | 2015-02-03 |
| 8946802 | Method of eDRAM DT strap formation in FinFET device structure | Veeraraghavan S. Basker, Sivananda K. Kanakasabapathy, Chun-Chen Yeb | 2015-02-03 |
| 8946791 | Finfet with reduced parasitic capacitance | Veeraraghavan S. Basker, Effendi Leobandung | 2015-02-03 |
| 8940602 | Self-aligned structure for bulk FinFET | Veeraraghavan S. Basker, Effendi Leobandung, Chun-Chen Yeh | 2015-01-27 |
| 8941161 | Semiconductor device including finFET and diode having reduced defects in depletion region | Veeraraghavan S. Basker | 2015-01-27 |