Issued Patents All Time
Showing 226–250 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10014370 | Air gap adjacent a bottom source/drain region of vertical transistor device | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2018-07-03 |
| 10014299 | Field effect transistor device spacers | Xiuyu Cai, Sanjay C. Mehta | 2018-07-03 |
| 10014295 | Self heating reduction for analog radio frequency (RF) device | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Soon-Cheon Seo | 2018-07-03 |
| 10014220 | Self heating reduction for analog radio frequency (RF) device | Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Soon-Cheon Seo | 2018-07-03 |
| 10002965 | Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping | Kangguo Cheng, Ruilong Xie | 2018-06-19 |
| 10002945 | Composite spacer enabling uniform doping in recessed fin devices | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-06-19 |
| 10002940 | Spacer chamfering gate stack scheme | Hyun-Jin Cho, Hui Zang | 2018-06-19 |
| 10002939 | Nanosheet transistors having thin and thick gate dielectric material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-06-19 |
| 10002921 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-06-19 |
| 9997609 | Implantation formed metal-insulator-semiconductor (MIS) contacts | Chia-Yu Chen, Zuoguang Liu, Chun-Chen Yeh | 2018-06-12 |
| 9997607 | Mirrored contact CMOS with self-aligned source, drain, and back-gate | Terence B. Hook, Joshua M. Rubin | 2018-06-12 |
| 9997472 | Support for long channel length nanowire transistors | Karthik Balakrishnan, Isaac Lauer, Jeffrey W. Sleight | 2018-06-12 |
| 9991366 | Anchored stress-generating active semiconductor regions for semiconductor-on-insulator FinFET | Veeraraghavan S. Basker, Krishna Iyengar, Chun-Chen Yeh | 2018-06-05 |
| 9991355 | Implantation formed metal-insulator-semiconductor (MIS) contacts | Chia-Yu Chen, Zuoguang Liu, Chun-Chen Yeh | 2018-06-05 |
| 9991339 | Bulk to silicon on insulator device | Terence B. Hook, Joshua M. Rubin | 2018-06-05 |
| 9985130 | Salicide formation on replacement metal gate finFET devices | Effendi Leobandung, Soon-Cheon Seo, Chun-Chen Yeh | 2018-05-29 |
| 9985100 | Localized and self-aligned punch through stopper doping for finFET | Effendi Leobandung | 2018-05-29 |
| 9985032 | Selectively degrading current resistance of field effect transistor devices | Veeraraghavan S. Basker, Effendi Leobandung, Dieter Wendel | 2018-05-29 |
| 9985027 | Stable multiple threshold voltage devices on replacement metal gate CMOS devices | Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2018-05-29 |
| 9984893 | Fin cut for taper device | Kangguo Cheng, Ruilong Xie | 2018-05-29 |
| 9984880 | Well and punch through stopper formation using conformal doping | Effendi Leobandung | 2018-05-29 |
| 9978871 | Bulk to silicon on insulator device | Terence B. Hook, Joshua M. Rubin | 2018-05-22 |
| 9978750 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla | 2018-05-22 |
| 9966430 | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) | Kangguo Cheng, Xin Miao, Ruilong Xie | 2018-05-08 |
| 9960271 | Method of forming vertical field effect transistors with different threshold voltages and the resulting integrated circuit structure | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2018-05-01 |