Issued Patents All Time
Showing 251–275 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9953977 | FinFET semiconductor device | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-04-24 |
| 9953857 | Semiconductor device with buried local interconnects | Effendi Leobandung | 2018-04-24 |
| 9947793 | Vertical pillar-type field effect transistor and method | Ruilong Xie, Kangguo Cheng | 2018-04-17 |
| 9947774 | Fin field effect transistor complementary metal oxide semiconductor with dual strained channels with solid phase doping | Kangguo Cheng, Ruilong Xie | 2018-04-17 |
| 9947748 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Shogo Mochizuki | 2018-04-17 |
| 9947744 | Nanowire semiconductor device including lateral-etch barrier region | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-04-17 |
| 9947586 | Tunneling fin type field effect transistor with epitaxial source and drain regions | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2018-04-17 |
| 9941175 | Dielectric isolated SiGe fin on bulk substrate | Huiming Bu, Shogo Mochizuki | 2018-04-10 |
| 9935180 | Fin cut for taper device | Kangguo Cheng, Ruilong Xie | 2018-04-03 |
| 9935018 | Methods of forming vertical transistor devices with different effective gate lengths | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2018-04-03 |
| 9929255 | Robust gate spacer for semiconductor devices | Effendi Leobandung | 2018-03-27 |
| 9929247 | Etch stop for airgap protection | Kangguo Cheng, Ruilong Xie | 2018-03-27 |
| 9929246 | Forming air-gap spacer for vertical field effect transistor | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-27 |
| 9923074 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta | 2018-03-20 |
| 9923055 | Inner spacer for nanosheet transistors | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-20 |
| 9922942 | Support for long channel length nanowire transistors | Karthik Balakrishnan, Isaac Lauer, Jeffrey W. Sleight | 2018-03-20 |
| 9917162 | Fabrication of vertical field effect transistor structure with controlled gate length | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-13 |
| 9917152 | Nanosheet transistors on bulk material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-03-13 |
| 9917081 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Junli Wang, Ruilong Xie | 2018-03-13 |
| 9911657 | Semiconductor device including finFET and fin varactor | Kangguo Cheng, Junli Wang, Ruilong Xie | 2018-03-06 |
| 9905671 | Forming a gate contact in the active area | Kangguo Cheng, Ruilong Xie | 2018-02-27 |
| 9905665 | Replacement metal gate stack for diffusion prevention | Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Injo Ok | 2018-02-27 |
| 9899525 | Increased contact area for finFETs | Veeraraghavan S. Basker, Chung-Hsun Lin, Zuoguang Liu, Chun-Chen Yeh | 2018-02-20 |
| 9899524 | Split fin field effect transistor enabling back bias on fin type field effect transistors | Veeraraghavan S. Basker, Zuoguang Liu, Xin Miao | 2018-02-20 |
| 9899373 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2018-02-20 |