Issued Patents All Time
Showing 426–450 of 605 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691662 | Field effect transistors having multiple effective work functions | Min Dai, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon | 2017-06-27 |
| 9682693 | Hybrid vehicle | Masaya Amano, Shinichiro Minegishi, Takeshi Kishimoto | 2017-06-20 |
| 9679967 | Contact resistance reduction by III-V Ga deficient surface | Kevin K. Chan, John Rozen, Jeng-Bang Yau, Yu Zhu | 2017-06-13 |
| 9653534 | Trench metal-insulator-metal capacitor with oxygen gettering layer | Eduard A. Cartier, Michael P. Chudzik, Aritra Dasgupta, Herbert L. Ho, Donghun Kang +3 more | 2017-05-16 |
| 9634116 | Method to improve reliability of high-K metal gate stacks | Eduard A. Cartier, Barry P. Linder, Vijay Narayanan | 2017-04-25 |
| 9627378 | Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding | Robert H. Dennard, Isaac Lauer, Ramachandran Muralidhar, Ghavam G. Shahidi | 2017-04-18 |
| 9627484 | Devices with multiple threshold voltages formed on a single wafer using strain in the high-K layer | Mohit Bajaj, Terence B. Hook, Rajan K. Pandey, Rajesh Sathiyanarayanan | 2017-04-18 |
| 9620384 | Control of O-ingress into gate stack dielectric layer using oxygen permeable layer | Claude Ortolland, Kai Zhao | 2017-04-11 |
| 9613866 | Gate stack formed with interrupted deposition processes and laser annealing | Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan, Unoh Kwon | 2017-04-04 |
| 9613870 | Gate stack formed with interrupted deposition processes and laser annealing | Aritra Dasgupta, Oleg Gluschenkov, Balaji Kannan, Unoh Kwon | 2017-04-04 |
| 9608066 | High-K spacer for extension-free CMOS devices with high mobility channel materials | Pouya Hashemi, Vijay Narayanan, Yanning Sun | 2017-03-28 |
| 9601546 | Scaled cross bar array with undercut electrode | Marwan H. Khater, Seyoung Kim, Hiroyuki Miyazoe | 2017-03-21 |
| 9583486 | Stable work function for narrow-pitch devices | Mohit Bajaj, Terence B. Hook, Rajan K. Pandey, Rajesh Sathiyanarayanan | 2017-02-28 |
| 9570361 | Method of fabricating a semiconductor device including high-K metal gate having reduced threshold voltage variation | David J. Frank | 2017-02-14 |
| 9570569 | Selective thickening of PFET dielectric | Hemanth Jagannathan, Barry P. Linder | 2017-02-14 |
| 9564500 | Fully-depleted SOI MOSFET with U-shaped channel | Robert H. Dennard, Isaac Lauer, Ramachandran Muralidhar | 2017-02-07 |
| 9515164 | Methods and structure to form high K metal gate stack with single work-function metal | Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon, Shahab Siddiqui | 2016-12-06 |
| 9496263 | Stacked strained and strain-relaxed hexagonal nanowires | Pouya Hashemi, John A. Ott, Alexander Reznicek | 2016-11-15 |
| 9496183 | Selective thickening of pFET dielectric | Hemanth Jagannathan, Barry P. Linder | 2016-11-15 |
| 9496306 | Solid-state imaging device, method for manufacturing the same, and imaging apparatus | Tetsuji Yamaguchi, Yuko Ohgishi, Harumi Ikeda | 2016-11-15 |
| 9484427 | Field effect transistors having multiple effective work functions | Min Dai, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon | 2016-11-01 |
| 9484438 | Method to improve reliability of replacement gate device | Eduard A. Cartier, Kisik Choi, Vijay Narayanan | 2016-11-01 |
| 9484412 | Strained silicon—germanium integrated circuit with inversion capacitance enhancement and method to fabricate same | Pouya Hashemi, Pranita Kerber, Alexander Reznicek | 2016-11-01 |
| 9472419 | Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme | Hemanth Jagannathan, Balaji Kannan, Siddarth A. Krishnan, Unoh Kwon, Rekha Rajaram | 2016-10-18 |
| 9472553 | High-K gate dielectric and metal gate conductor stack for planar field effect transistors formed on type III-V semiconductor material and silicon germanium semiconductor material | Martin M. Frank, Pranita Kerber, Vijay Narayanan | 2016-10-18 |