Issued Patents All Time
Showing 1,076–1,100 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9165928 | Methods of forming gate structures for CMOS based integrated circuit products and the resulting devices | Kisik Choi | 2015-10-20 |
| 9165836 | Methods of forming replacement gate structures using a gate height register process to improve gate height uniformity and the resulting integrated circuit products | Michael Wedlake, Xiuyu Cai, Ali Khakifirooz, Kangguo Cheng | 2015-10-20 |
| 9153498 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-10-06 |
| 9153694 | Methods of forming contact structures on finfet semiconductor devices and the resulting devices | Ryan Ryoung-Han Kim, William J. Taylor, Jr. | 2015-10-06 |
| 9147576 | Gate contact with vertical isolation from source-drain | David V. Horak, Shom Ponoth, Balasubramanian Pranatharthiharan | 2015-09-29 |
| 9147765 | FinFET semiconductor devices with improved source/drain resistance and methods of making same | Mark V. Raymond, Robert J. Miller | 2015-09-29 |
| 9147748 | Methods of forming replacement spacer structures on semiconductor devices | Xiuyu Cai, Ajey Poovannummoottil Jacob, Andreas Knorr, Christopher M. Prindle | 2015-09-29 |
| 9147730 | Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process | Andreas Knorr, Ajey Poovannummoottil Jacob, Michael Hargrove | 2015-09-29 |
| 9142651 | Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting device | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-09-22 |
| 9130029 | Recessing and capping of gate structures with varying metal compositions | David V. Horak, Su Chen Fan, Pranatharthiharan Haran Balasubramanian | 2015-09-08 |
| 9117908 | Methods of forming replacement gate structures for semiconductor devices and the resulting semiconductor products | Xiuyu Cai, Andy Wei | 2015-08-25 |
| 9117877 | Methods of forming a dielectric cap layer on a metal gate structure | Xiuyu Cai, Jin Cho, John A. Iacoponi | 2015-08-25 |
| 9111907 | Silicide protection during contact metallization and resulting semiconductor structures | Vimal Kamineni, Robert J. Miller | 2015-08-18 |
| 9105617 | Methods and structures for eliminating or reducing line end epi material growth on gate structures | Shom Ponoth, Juntao Li | 2015-08-11 |
| 9093467 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Kisik Choi | 2015-07-28 |
| 9093302 | Methods of forming substantially self-aligned isolation regions on FinFET semiconductor devices and the resulting devices | Vimal Kamineni, Abner Bello, Nicholas V. LiCausi, Wenhui Wang, Michael Wedlake +1 more | 2015-07-28 |
| 9082852 | LDMOS FinFET device using a long channel region and method of manufacture | Qing Liu, Xiuyu Cai, Chun-Chen Yeh | 2015-07-14 |
| 9070742 | FinFet integrated circuits with uniform fin height and methods for fabricating the same | Xiuyu Cai | 2015-06-30 |
| 9070711 | Methods of forming cap layers for semiconductor devices with self-aligned contact elements and the resulting devices | Xiuyu Cai, Larry Zhao | 2015-06-30 |
| 9064890 | Methods of forming isolation material on FinFET semiconductor devices and the resulting devices | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-06-23 |
| 9064948 | Methods of forming a semiconductor device with low-k spacers and the resulting device | Xiuyu Cai, Xunyuan Zhang | 2015-06-23 |
| 9059042 | Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices | Ajey Poovannummoottil Jacob | 2015-06-16 |
| 9029920 | Semiconductor devices and methods of fabrication with reduced gate and contact resistances | Xiuyu Cai, Vimal Kamineni, Kangguo Cheng, Ali Khakifirooz | 2015-05-12 |
| 9024388 | Methods of forming gate structures for CMOS based integrated circuit products and the resulting devices | Kisik Choi | 2015-05-05 |
| 9000537 | FinFET devices having recessed liner materials to define different fin heights | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-04-07 |