Issued Patents All Time
Showing 1,051–1,075 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9281382 | Method for making semiconductor device with isolation pillars between adjacent semiconductor fins | Qing Liu, Xiuyu Cai, Chun-Chen Yeh | 2016-03-08 |
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2016-02-23 |
| 9269712 | Semiconductor device providing enhanced fin isolation and related methods | Qing Liu, Hyun-Jin Cho | 2016-02-23 |
| 9263340 | Methods for removing selected fins that are formed for finFET semiconductor devices | William J. Taylor, Jr. | 2016-02-16 |
| 9263446 | Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting products | Kwan-Yong Lim, Min Gyu Sung, Chanro Park | 2016-02-16 |
| 9263338 | Semiconductor device including vertically spaced semiconductor channel structures and related methods | Qing Liu, Xiuyu Cai | 2016-02-16 |
| 9257348 | Methods of forming replacement gate structures for transistors and the resulting devices | Kisik Choi, Su Chen Fan, Shom Ponoth | 2016-02-09 |
| 9245885 | Methods of forming lateral and vertical FinFET devices and the resulting product | Andreas Knorr | 2016-01-26 |
| 9245979 | FinFET semiconductor devices with local isolation features and methods for fabricating the same | Xiuyu Cai, Songkram Srivathanakul | 2016-01-26 |
| 9236480 | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2016-01-12 |
| 9236557 | Magnetic tunnel junction between metal layers of a semiconductor device | Xunyuan Zhang, Xiuyu Cai, Hyun-Jin Cho | 2016-01-12 |
| 9236479 | Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices | Ajey Poovannummoottil Jacob | 2016-01-12 |
| 9236258 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Xiuyu Cai, Andy Wei, Qi Zhang, Ajey Poovannummoottil Jacob, Michael Hargrove | 2016-01-12 |
| 9231051 | Methods of forming spacers on FinFETs and other semiconductor devices | Xiuyu Cai, William J. Taylor, Jr. | 2016-01-05 |
| 9219153 | Methods of forming gate structures for FinFET devices and the resulting semiconductor products | Shom Ponoth, Juntao Li | 2015-12-22 |
| 9214553 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ajey Poovannummoottil Jacob, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2015-12-15 |
| 9202918 | Methods of forming stressed layers on FinFET semiconductor devices and the resulting devices | Ryan Ryoung-Han Kim, William J. Taylor, Jr. | 2015-12-01 |
| 9202919 | FinFETs and techniques for controlling source and drain junction profiles in finFETs | Qing Liu, Xiuyu Cai, Kejia Wang, Chun-Chen Yeh | 2015-12-01 |
| 9202920 | Methods for forming vertical and sharp junctions in finFET structures | Qing Liu, Chun-Chen Yeh, Xiuyu Cai | 2015-12-01 |
| 9196696 | Integrated circuits with improved gate uniformity and methods for fabricating same | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-11-24 |
| 9190260 | Topological method to build self-aligned MTJ without a mask | Xunyuan Zhang, Xiuyu Cai, Seowoo Nam, Hyun-Jin Cho | 2015-11-17 |
| 9190486 | Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance | Xiuyu Cai, Xunyuan Zhang | 2015-11-17 |
| 9190487 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek +2 more | 2015-11-17 |
| 9178036 | Methods of forming transistor devices with different threshold voltages and the resulting products | Naim Moumen, Chanro Park, Hoon Kim, Steven Bentley | 2015-11-03 |
| 9171934 | Methods of forming semiconductor devices using a layer of material having a plurality of trenches formed therein | William J. Taylor, Jr., Ryan Ryoung-Han Kim | 2015-10-27 |