Issued Patents All Time
Showing 1,101–1,125 of 1,139 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8962413 | Methods of forming spacers on FinFETs and other semiconductor devices | Xiuyu Cai, William J. Taylor, Jr. | 2015-02-24 |
| 8957465 | Formation of the dielectric cap layer for a replacement gate structure | Balasubramanian S. Pranatharthi Haran, David V. Horak, Su Chen Fan | 2015-02-17 |
| 8946075 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Xiuyu Cai, John A. Iacoponi | 2015-02-03 |
| 8946793 | Integrated circuits having replacement gate structures and methods for fabricating the same | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2015-02-03 |
| 8940626 | Integrated circuit and method for fabricating the same having a replacement gate structure | Pranatharthi Haran Balasubramanian | 2015-01-27 |
| 8941156 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Ali Khakifirooz, Shom Ponoth +4 more | 2015-01-27 |
| 8940633 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Xiuyu Cai, John A. Iacoponi | 2015-01-27 |
| 8936979 | Semiconductor devices having improved gate height uniformity and methods for fabricating same | Xiuyu Cai, Andy Wei, Robert J. Miller | 2015-01-20 |
| 8937359 | Contact formation for ultra-scaled devices | Shom Ponoth, David V. Horak, Balasubramanian Pranatharthiharan | 2015-01-20 |
| 8928048 | Methods of forming semiconductor device with self-aligned contact elements and the resulting device | Xiuyu Cai | 2015-01-06 |
| 8921191 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Xiuyu Cai, Ali Khakifirooz, Kangguo Cheng | 2014-12-30 |
| 8900941 | Methods of forming spacers on FinFETs and other semiconductor devices | Xiuyu Cai, William J. Taylor, Jr. | 2014-12-02 |
| 8890262 | Semiconductor device having a metal gate recess | Vimal Kamineni | 2014-11-18 |
| 8883623 | Facilitating gate height uniformity and inter-layer dielectric protection | Xiuyu Cai, Pranatharthiharan Haran Balasubramanian, Shom Ponoth | 2014-11-11 |
| 8878300 | Semiconductor device including outwardly extending source and drain silicide contact regions and related methods | Qing Liu | 2014-11-04 |
| 8846477 | Methods of forming 3-D semiconductor devices using a replacement gate technique and a novel 3-D device | Xiuyu Cai | 2014-09-30 |
| 8841711 | Methods of increasing space for contact elements by using a sacrificial liner and the resulting device | Xiuyu Cai, Ali Khakifirooz, Kangguo Cheng | 2014-09-23 |
| 8835244 | Integrated circuits and methods for fabricating integrated circuits having metal gate electrodes | Chanro Park, Shom Ponoth | 2014-09-16 |
| 8835262 | Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materials | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2014-09-16 |
| 8815742 | Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2014-08-26 |
| 8809920 | Prevention of fin erosion for semiconductor devices | Ali Khakifirooz, Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek +2 more | 2014-08-19 |
| 8772168 | Formation of the dielectric cap layer for a replacement gate structure | Balasubramanian S. Pranatharthi Haran, David V. Horak, Su Chen Fan | 2014-07-08 |
| 8772101 | Methods of forming replacement gate structures on semiconductor devices and the resulting device | Ponoth Shom, Cho Jin, Charan V. Surisetty | 2014-07-08 |
| 8753970 | Methods of forming semiconductor devices with self-aligned contacts and the resulting devices | Ponoth Shom, Xiuyu Cai, Balasubramanian Pranatharthiharan, Robert J. Miller | 2014-06-17 |
| 8748309 | Integrated circuits with improved gate uniformity and methods for fabricating same | Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz | 2014-06-10 |