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Ruilong Xie

IBM: 731 patents #10 of 70,183Top 1%
Globalfoundries: 577 patents #1 of 4,424Top 1%
SS Stmicroelectronics Sa: 62 patents #8 of 1,676Top 1%
GU Globalfoundries U.S.: 29 patents #17 of 665Top 3%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
IN Intermolecular: 1 patents #186 of 248Top 75%
📍 Niskayuna, NY: #1 of 949 inventorsTop 1%
🗺 New York: #3 of 115,490 inventorsTop 1%
Overall (All Time): #53 of 4,157,543Top 1%
1139
Patents All Time

Issued Patents All Time

Showing 1,126–1,139 of 1,139 patents

Patent #TitleCo-InventorsDate
8735272 Integrated circuit having a replacement gate structure and method for fabricating the same Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz 2014-05-27
8728908 Methods of forming a dielectric cap layer on a metal gate structure Chang Seo Park, William James Taylor, III, John A. Iacoponi 2014-05-20
8703557 Methods of removing dummy fin structures when forming finFET devices Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz 2014-04-22
8691696 Methods for forming an integrated circuit with straightened recess profile Xiuyu Cai, Xunyuan Zhang, Errol Todd Ryan, John A. Iacoponi 2014-04-08
8692316 Isolation structures for FinFET semiconductor devices 2014-04-08
8679968 Method for forming a self-aligned contact opening by a lateral etch Su Chen Fan, Pranatharthiharan Haran Balasubramanian, David V. Horak, Ponoth Shom 2014-03-25
8679909 Recessing and capping of gate structures with varying metal compositions David V. Horak, Su Chen Fan, Pranatharthiharan Haran Balasubramanian 2014-03-25
8617973 Semiconductor device fabrication methods with enhanced control in recessing processes Robert J. Miller 2013-12-31
8609480 Methods of forming isolation structures on FinFET semiconductor devices 2013-12-17
8580634 Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formation Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz 2013-11-12
8551843 Methods of forming CMOS semiconductor devices Xiuyu Cai 2013-10-08
8541274 Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz 2013-09-24
8524592 Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices Xiuyu Cai, Kangguo Cheng, Ali Khakifirooz 2013-09-03
8354320 Methods of controlling fin height of FinFET devices by performing a directional deposition process Robert J. Miller 2013-01-15