Issued Patents All Time
Showing 1,151–1,175 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10224329 | Forming gates with varying length using sidewall image transfer | Juntao Li, Geng Wang, Qintao Zhang | 2019-03-05 |
| 10224277 | Dielectric thermal conductor for passivating eFuse and metal resistor | Qing Cao, Zhengwen Li, Fei Liu | 2019-03-05 |
| 10224247 | FinFET devices | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-03-05 |
| 10224246 | Multi-layer filled gate cut to prevent power rail shorting to gate structure | Hao Tang, Peng Xu | 2019-03-05 |
| 10224207 | Forming a contact for a tall fin transistor | Ruilong Xie, Tenko Yamashita | 2019-03-05 |
| 10217869 | Semiconductor structure including low-K spacer material | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie | 2019-02-26 |
| 10217868 | Airgap spacers | Zuoguang Liu, Chun Wing Yeung | 2019-02-26 |
| 10217867 | Uniform fin dimensions using fin cut hardmask | Peng Xu | 2019-02-26 |
| 10217845 | Vertical field effect transistors with bottom source/drain epitaxy | Xin Miao, Wenyu Xu, Chen Zhang | 2019-02-26 |
| 10217843 | Fabrication of vertical field effect transistor structure with strained channels | Juntao Li | 2019-02-26 |
| 10217841 | Forming an uniform L-shaped inner spacer for a vertical transport fin field effect transistor (VT FinFET) | Juntao Li, Peng Xu, Jingyun Zhang | 2019-02-26 |
| 10217840 | Replacement metal gate structures | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-02-26 |
| 10217818 | Method of formation of germanium nanowires on bulk substrates | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2019-02-26 |
| 10217707 | Trench contact resistance reduction | Zhenxing Bi, Juntao Li, Peng Xu | 2019-02-26 |
| 10217672 | Vertical transistor devices with different effective gate lengths | Ruilong Xie, Chun-Chen Yeh, Tenko Yamashita | 2019-02-26 |
| 10217658 | Method and structure for minimizing fin reveal variation in FinFET transistor | Zhenxing Bi, Juntao Li, Hao Tang | 2019-02-26 |
| 10217634 | Fin patterns with varying spacing without fin cut | Marc A. Bergendahl, John R. Sporre, Sean Teehan | 2019-02-26 |
| 10211320 | Fin cut without residual fin defects | Pouya Hashemi, Alexander Reznicek, Dominic J. Schepis | 2019-02-19 |
| 10211302 | Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts | Peng Xu | 2019-02-19 |
| 10211288 | Vertical transistors with multiple gate lengths | Zhenxing Bi, Peng Xu, Zheng Xu | 2019-02-19 |
| 10211092 | Transistor with robust air spacer | Chanro Park | 2019-02-19 |
| 10211055 | Fin patterns with varying spacing without fin cut | Marc A. Bergendahl, John R. Sporre, Sean Teehan | 2019-02-19 |
| 10209367 | Colorimetric radiation dosimetry | Qing Cao, Zhengwen Li, Fei Liu | 2019-02-19 |
| 10204916 | Selective epitaxy growth for semiconductor devices with fin field-effect transistors (FinFET) | Veeraraghavan S. Basker, Ali Khakifirooz | 2019-02-12 |
| 10204836 | Porous silicon relaxation medium for dislocation free CMOS devices | Ramachandra Divakaruni, Jeehwan Kim, Juntao Li, Devendra K. Sadana | 2019-02-12 |