Issued Patents All Time
Showing 876–900 of 2,819 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10504794 | Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistor | Choonghyun Lee, Juntao Li, Peng Xu | 2019-12-10 |
| 10504890 | High density nanosheet diodes | Juntao Li, Geng Wang, Qintao Zhang | 2019-12-10 |
| 10505019 | Vertical field effect transistors with self aligned source/drain junctions | Xin Miao, Chen Zhang, Wenyu Xu | 2019-12-10 |
| 10505048 | Self-aligned source/drain contact for vertical field effect transistor | Wenyu Xu, Chen Zhang, Xin Miao | 2019-12-10 |
| 10504793 | Hybrid-channel nano-sheet FETs | Zhenxing Bi, Peng Xu, Wenyu Xu | 2019-12-10 |
| 10497796 | Vertical transistor with reduced gate length variation | Juntao Li, Choonghyun Lee, Peng Xu | 2019-12-03 |
| 10497629 | Self-aligned punch through stopper liner for bulk FinFET | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-12-03 |
| 10497799 | Dummy dielectric fins for finFETs with silicon and silicon germanium channels | Xin Miao, Wenyu Xu, Chen Zhang | 2019-12-03 |
| 10490546 | Forming on-chip metal-insulator-semiconductor capacitor | Zhenxing Bi, Peng Xu, Chen Zhang | 2019-11-26 |
| 10490453 | High threshold voltage FET with the same fin height as regular threshold voltage vertical FET | Xin Miao, Chen Zhang, Wenyu Xu | 2019-11-26 |
| 10490447 | Airgap formation in BEOL interconnect structure using sidewall image transfer | Ekmini Anuja De Silva, Juntao Li, Yi Song, Peng Xu | 2019-11-26 |
| 10483166 | Vertically stacked transistors | Tenko Yamahita, Chun Wing Yeung, Chen Zhang | 2019-11-19 |
| 10483375 | Fin cut etch process for vertical transistor devices | Wenyu Xu, Chen Zhang, Xin Miao | 2019-11-19 |
| 10483382 | Tunnel transistor | Peng Xu, Heng Wu, Zhenxing Bi | 2019-11-19 |
| 10475923 | Method and structure for forming vertical transistors with various gate lengths | Shogo Mochizuki, Choonghyun Lee, Juntao Li | 2019-11-12 |
| 10468524 | Vertical field effect transistor with improved reliability | Xin Miao, Philip J. Oldiges, Wenyu Xu, Chen Zhang | 2019-11-05 |
| 10468525 | VFET CMOS dual epitaxy integration | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-11-05 |
| 10460944 | Fully depleted semiconductor on insulator transistor with enhanced back biasing tunability | Shawn P. Fetterolf, Terry Hook | 2019-10-29 |
| 10461184 | Transistor having reduced gate-induced drain-leakage current | Choonghyun Lee | 2019-10-29 |
| 10460982 | Formation of semiconductor devices with dual trench isolations | Juntao Li, Choonghyun Lee, Peng Xu | 2019-10-29 |
| 10453940 | Vertical field effect transistor with strained channel region extension | Shogo Mochizuki, Choonghyun Lee, Juntao Li | 2019-10-22 |
| 10453959 | Fin replacement in a field-effect transistor | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis | 2019-10-22 |
| 10453939 | Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain | Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh | 2019-10-22 |
| 10454025 | Phase change memory with gradual resistance change | — | 2019-10-22 |
| 10453934 | Vertical transport FET devices having air gap top spacer | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2019-10-22 |