KC

Kangguo Cheng

IBM: 2575 patents #1 of 70,183Top 1%
Globalfoundries: 269 patents #3 of 4,424Top 1%
TE Tessera: 34 patents #14 of 271Top 6%
SS Stmicroelectronics Sa: 19 patents #57 of 1,676Top 4%
AS Adeia Semiconductor Solutions: 13 patents #1 of 57Top 2%
ET Elpis Technologies: 12 patents #1 of 121Top 1%
CEA: 6 patents #716 of 7,956Top 9%
GU Globalfoundries U.S.: 5 patents #206 of 665Top 35%
Samsung: 5 patents #22,466 of 75,807Top 30%
RE Renesas Electronics: 4 patents #1,016 of 4,529Top 25%
IB International Business: 1 patents #4 of 119Top 4%
📍 Schenectady, NY: #1 of 1,353 inventorsTop 1%
🗺 New York: #1 of 115,490 inventorsTop 1%
Overall (All Time): #5 of 4,157,543Top 1%
2819
Patents All Time

Issued Patents All Time

Showing 276–300 of 2,819 patents

Patent #TitleCo-InventorsDate
11195912 Inner spacer for nanosheet transistors Choonghyun Lee, Juntao Li, Peng Xu 2021-12-07
11196575 On-chipset certification to prevent spy chip 2021-12-07
11189724 Method of forming a top epitaxy source/drain structure for a vertical transistor Dexin Kong, Shogo Mochizuki 2021-11-30
11189729 Forming a sacrificial liner for dual channel devices Huiming Bu, Dechao Guo, Sivananda K. Kanakasabapathy, Peng Xu 2021-11-30
11189693 Transistor having reduced contact resistance Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang 2021-11-30
11189713 Nanosheet transistor having wrap-around bottom isolation Ruilong Xie, Lan Yu, Heng Wu 2021-11-30
11183430 Self-limiting liners for increasing contact trench volume in n-type and p-type transistors Choonghyun Lee, Juntao Li, Peng Xu 2021-11-23
11183561 Nanosheet transistor with inner spacers Ruilong Xie, Chanro Park, Juntao Li 2021-11-23
11183577 Formation of air gap spacers for reducing parasitic capacitance Peng Xu, Choonghyun Lee, Heng Wu 2021-11-23
11183578 Contact over active gate employing a stacked spacer 2021-11-23
11183581 Vertical field effect transistor having improved uniformity Juntao Li, Ruilong Xie, Chanro Park 2021-11-23
11183636 Techniques for forming RRAM cells Juntao Li, Dexin Kong, Takashi Ando 2021-11-23
11177181 Scalable device for FINFET technology Ruilong Xie, Juntao Li, Chanro Park 2021-11-16
11177632 Augmented semiconductor lasers with spontaneous emissions blockage Julien Frougier, Ruilong Xie, Chanro Park 2021-11-16
11177285 Conductive contacts in semiconductor on insulator substrate Rama Divakaruni 2021-11-16
11177369 Stacked vertical field effect transistor with self-aligned junctions Lan Yu, Xin Miao, Chen Zhang, Heng Wu 2021-11-16
11171204 High thermal budget compatible punch through stop integration using doped glass Sanjay C. Mehta, Xin Miao, Chun-Chen Yeh 2021-11-09
11171044 Planarization controllability for interconnect structures Ruilong Xie, Chanro Park, Julien Frougier, Chih-Chao Yang 2021-11-09
11164799 Stacked vertical transport field effect transistor contact formation Heng Wu, Chen Zhang, Tenko Yamashita 2021-11-02
11164959 VFET devices with ILD protection Zhenxing Bi, Juntao Li, Peng Xu 2021-11-02
11164940 Method of forming III-V on insulator structure on semiconductor substrate Xin Miao, Wenyu Xu, Chen Zhang 2021-11-02
11154628 Self-sterilizing sensor Shawn P. Fetterolf, Donald F. Canaperi, Lawrence A. Clevenger 2021-10-26
11158544 Vertical stacked nanosheet CMOS transistors with different work function metals Juntao Li, Ruilong Xie, Chanro Park 2021-10-26
11158730 Formation of inner spacer on nanosheet MOSFET Zhenxing Bi, Juntao Li, Peng Xu 2021-10-26
11152213 Transistor device with ultra low-k self aligned contact cap and ultra low-k spacer 2021-10-19