Issued Patents All Time
Showing 351–375 of 401 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10332983 | Vertical field-effect transistors including uniform gate lengths | Kangguo Cheng, Juntao Li, Heng Wu, Peng Xu | 2019-06-25 |
| 10332809 | Method and structure to introduce strain in stack nanosheet field effect transistor | Takashi Ando, Jingyun Zhang, Pouya Hashemi, Alexander Reznicek | 2019-06-25 |
| 10332999 | Method and structure of forming fin field-effect transistor without strain relaxation | Kangguo Cheng, Juntao Li, Peng Xu, Heng Wu | 2019-06-25 |
| 10326001 | Self-limited inner spacer formation for gate-all-around field effect transistors | Robinhsinku Chao, Heng Wu, Chun Wing Yeung, Jingyun Zhang | 2019-06-18 |
| 10325815 | Vertical transport fin field effect transistors having different channel lengths | Ruqiang Bao, Shogo Mochizuki, Chun Wing Yeung | 2019-06-18 |
| 10325820 | Source and drain isolation for CMOS nanosheet with one block mask | Soon-Cheon Seo, Injo Ok | 2019-06-18 |
| 10319643 | Vertical FET with strained channel | Kangguo Cheng, Juntao Li, Shogo Mochizuki | 2019-06-11 |
| 10319826 | Replacement metal gate stack with oxygen and nitrogen scavenging layers | Takashi Ando, Pouya Hashemi | 2019-06-11 |
| 10319833 | Vertical transport field-effect transistor including air-gap top spacer | Hemanth Jagannathan, Alexander Reznicek, Christopher J. Waskiewicz | 2019-06-11 |
| 10319846 | Multiple work function nanosheet field-effect transistors with differential interfacial layer thickness | Takashi Ando, Jingyun Zhang, Pouya Hashemi | 2019-06-11 |
| 10312147 | Multi-layer work function metal gates with similar gate thickness to achieve multi-VT for VFETs | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison | 2019-06-04 |
| 10312326 | Long channels for transistors | Robin Hsin Kuo Chao, Heng Wu, Chun Wing Yeung, Jingyun Zhang | 2019-06-04 |
| 10312237 | Vertical transport transistors with equal gate stack thicknesses | Ruqiang Bao, Zhenxing Bi, Zheng Xu | 2019-06-04 |
| 10297671 | Uniform threshold voltage for nanosheet devices | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Vijay Narayanan, Koji Watanabe | 2019-05-21 |
| 10297598 | Formation of full metal gate to suppress interficial layer growth | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison, Vijay Narayanan | 2019-05-21 |
| 10297668 | Vertical transport fin field effect transistor with asymmetric channel profile | Brent A. Anderson, Injo Ok, Soon-Cheon Seo | 2019-05-21 |
| 10283620 | Approach to control over-etching of bottom spacers in vertical fin field effect transistor devices | Ruqiang Bao, Hemanth Jagannathan, Paul C. Jamison | 2019-05-07 |
| 10283565 | Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element | Peng Xu, Kangguo Cheng, Juntao Li | 2019-05-07 |
| 10276687 | Formation of self-aligned bottom spacer for vertical transistors | Ruqiang Bao, Hemanth Jagannathan, Shogo Mochizuki | 2019-04-30 |
| 10256159 | Formation of common interfacial layer on Si/SiGe dual channel complementary metal oxide semiconductor device | Ruqiang Bao, Hemanth Jagannathan, Shogo Mochizuki | 2019-04-09 |
| 10249540 | Dual channel CMOS having common gate stacks | Takashi Ando, Hemanth Jagannathan, Vijay Narayanan | 2019-04-02 |
| 10242919 | Vertical transport fin field effect transistors having different channel lengths | Ruqiang Bao, Shogo Mochizuki, Chun Wing Yeung | 2019-03-26 |
| 10243060 | Uniform low-k inner spacer module in gate-all-around (GAA) transistors | Robin Hsin Kuo Chao, Chun Wing Yeung, Jingyun Zhang | 2019-03-26 |
| 10236217 | Stacked field-effect transistors (FETs) with shared and non-shared gates | Takashi Ando, Pouya Hashemi, Alexander Reznicek, Jingyun Zhang | 2019-03-19 |
| 10236219 | VFET metal gate patterning for vertical transport field effect transistor | Brent A. Anderson, Ruqiang Bao, Kangguo Cheng, Hemanth Jagannathan, Junli Wang | 2019-03-19 |