Issued Patents All Time
Showing 76–88 of 88 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6413873 | System for chemical mechanical planarization | John M. White, Lawrence Rosenberg, Martin Scales, Ramin Emami, James V. Tietz +1 more | 2002-07-02 |
| 6322427 | Conditioning fixed abrasive articles | Sidney P. Huey, Ramin Emami, Fritz Redeker, John M. White | 2001-11-27 |
| 6261157 | Selective damascene chemical mechanical polishing | Rajeev Bajaj, Fritz Redeker, John M. White, Yutao Ma | 2001-07-17 |
| 6251187 | Gas distribution in deposition chambers | Fred C. Redeker, Tetsuya Ishikawa | 2001-06-26 |
| 6179709 | In-situ monitoring of linear substrate polishing operations | Fred C. Redeker, Manoocher Birang, Sasson Somekh | 2001-01-30 |
| 6170428 | Symmetric tunable inductively coupled HDP-CVD reactor | Fred C. Redeker, Farhad Moghadam, Hiroji Hanawa, Tetsuya Ishikawa, Dan Maydan +5 more | 2001-01-09 |
| 6162368 | Technique for chemical mechanical polishing silicon | Thomas H. Osterheld, Fred C. Redeker | 2000-12-19 |
| 6083344 | Multi-zone RF inductively coupled source configuration | Hiroji Hanawa, Tetsuya Ishikawa, Manus Wong, Kaveh Niazi, Kenneth Smyth +3 more | 2000-07-04 |
| 6077357 | Orientless wafer processing on an electrostatic chuck | Kent Rossman, Brian Lue | 2000-06-20 |
| 6070551 | Deposition chamber and method for depositing low dielectric constant films | Yaxin Wang, Fred C. Redeker, Tetsuya Ishikawa, Alan W. Collins | 2000-06-06 |
| 6015591 | Deposition method | Fred C. Redeker, Tetsuya Ishikawa | 2000-01-18 |
| 5772771 | Deposition chamber for improved deposition thickness uniformity | Fred C. Redeker, Tetsuya Ishikawa | 1998-06-30 |
| 5761023 | Substrate support with pressure zones having reduced contact area and temperature feedback | Brian Lue, Tetsuya Ishikawa, Fred C. Redeker, Manus Wong | 1998-06-02 |