Patent Leaderboard
USPTO Patent Rankings Data through Sept 30, 2025
TB

Thomas H. Baum

ACAdvanced Technology & Materials Co.: 184 patents #1 of 410Top 1%
ENEntegris: 55 patents #1 of 643Top 1%
IBM: 16 patents #6,952 of 70,183Top 10%
Infineon Technologies Ag: 5 patents #2,021 of 7,486Top 30%
SASiemens Aktiengesellschaft: 2 patents #6,658 of 22,248Top 30%
New Fairfield, CT: #2 of 222 inventorsTop 1%
Connecticut: #11 of 34,797 inventorsTop 1%
Overall (All Time): #1,871 of 4,157,543Top 1%
256 Patents All Time

Issued Patents All Time

Showing 151–175 of 256 patents

Patent #TitleCo-InventorsDate
7005303 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Frank Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder +2 more 2006-02-28
7005392 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder 2006-02-28
6989457 Chemical vapor deposition precursors for deposition of tantalum-based materials Smuruthi Kamepalli 2006-01-24
6989358 Supercritical carbon dioxide/chemical formulation for removal of photoresists Michael B. Korzenski, Eliodor G. Ghenciu, Chongying Xu 2006-01-24
6984417 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material Peter C. Van Buskirk, Jeffrey F. Roeder, Steven M. Bilodeau, Michael W. Russell, Stephen T. Johnston +1 more 2006-01-10
6960675 Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tianniu Chen, Chongying Xu 2005-11-01
6943139 Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations Michael B. Korzenski, Eliodor G. Ghenciu, Chongying Xu 2005-09-13
6936542 Polishing slurries for copper and associated materials William A. Wojtczak, Long Nguyen, Cary Regulski 2005-08-30
6909839 Delivery systems for efficient vaporization of precursor source material Luping Wang, Chongying Xu 2005-06-21
6869638 Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same Chongying Xu, Bryan C. Hendrix, Jeffrey F. Roeder 2005-03-22
6849200 Composition and process for wet stripping removal of sacrificial anti-reflective material David Bernhard, David W. Minsek, Melissa Murphy 2005-02-01
6846424 Plasma-assisted dry etching of noble metal-based materials Phillip Chen, Frank Dimeo, Jr., Peter C. Van Buskirk, Peter S. Kirlin 2005-01-25
6822107 Chemical vapor deposition precursors for deposition of copper Gautam Bhandari, Chongying Xu 2004-11-23
6800218 Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same Ying Ma, Michael Jones, Deepak Verma, David Bernhard 2004-10-05
6773873 pH buffered compositions useful for cleaning residue from semiconductor substrates Ma. Fatima Seijo, William A. Wojtczak, David Bernhard, David W. Minsek 2004-08-10
6767830 Br2SbCH3 a solid source ion implant and CVD precursor Ziyun Wang, Chongying Xu, Michael A. Todd, Niamh McMahon 2004-07-27
6740586 Vapor delivery system for solid precursors and method of using same Luping Wang, Chongying Xu 2004-05-25
6735978 Treatment of supercritical fluid utilized in semiconductor manufacturing applications Glenn M. Tom, Michael B. Korzenski, Eliodor G. Ghenciu, Chongying Xu 2004-05-18
6736993 Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same Chongying Xu, Bryan C. Hendrix 2004-05-18
6730523 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Frank Hintermaier, Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder +2 more 2004-05-04
6709610 Isotropic dry cleaning process for noble metal integrated circuit structures Peter C. Van Buskirk, Frank Dimeo, Jr., Peter S. Kirlin 2004-03-23
6692569 A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS Jeffrey F. Roeder, Ing-Shin Chen, Steven M. Bilodeau 2004-02-17
6692546 Chemical mechanical polishing compositions for metal and associated materials and method of using same Ying Ma, William A. Wojtczak, Cary Regulski, David Bernhard, Deepak Verma 2004-02-17
6660331 MOCVD of SBT using toluene-based solvent system for precursor delivery Bryan C. Hendrix, Debra Desrochers Christos, Jeffrey F. Roeder 2003-12-09
6639080 Pyrazolate copper complexes, and MOCVD of copper using same Chongying Xu, Ziyun Wang 2003-10-28