Issued Patents 2017
Showing 251–275 of 370 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9634142 | Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing | Dominic J. Schepis, Alexander Reznicek, Pouya Hashemi | 2017-04-25 |
| 9634005 | Gate planarity for FinFET using dummy polish stop | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-04-25 |
| 9634004 | Forming reliable contacts on tight semiconductor pitch | Xiuyu Cai, Ali Khakifirooz, Ruilong Xie, Tenko Yamashita | 2017-04-25 |
| 9633943 | Method and structure for forming on-chip anti-fuse with reduced breakdown voltage | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-04-25 |
| 9633912 | Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-04-25 |
| 9633911 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Bruce B. Doris, Ali Khakifirooz, Qing Liu, Nicolas Loubet, Scott Luning | 2017-04-25 |
| 9633906 | Gate structure cut after formation of epitaxial active regions | Xiuyu Cai, Johnathan E. Faltermeier, Ali Khakifirooz, Theodorus E. Standaert, Ruilong Xie | 2017-04-25 |
| 9627267 | Integrated circuit having strained fins on bulk substrate and method to fabricate same | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-04-18 |
| 9627536 | Field effect transistors with strained channel features | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-04-18 |
| 9627511 | Vertical transistor having uniform bottom spacers | Juntao Li, Geng Wang, Qintao Zhang | 2017-04-18 |
| 9627491 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-04-18 |
| 9627382 | CMOS NFET and PFET comparable spacer width | Injo Ok, Soon-Cheon Seo | 2017-04-18 |
| 9627381 | Confined N-well for SiGe strain relaxed buffer structures | Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek | 2017-04-18 |
| 9627377 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, David V. Horak, Ali Khakifirooz, Shom Ponoth, Theodorus E. Standaert +4 more | 2017-04-18 |
| 9627373 | CMOS compatible fuse or resistor using self-aligned contacts | Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang | 2017-04-18 |
| 9627278 | Method of source/drain height control in dual epi finFET formation | Veeraraghavan S. Basker, Ali Khakifirooz | 2017-04-18 |
| 9627277 | Method and structure for enabling controlled spacer RIE | Ryan O. Jung, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more | 2017-04-18 |
| 9627270 | Dual work function integration for stacked FinFET | Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek | 2017-04-18 |
| 9627245 | Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device | Ajey Poovannummoottil Jacob, Bruce B. Doris, Nicolas Loubet | 2017-04-18 |
| 9620506 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region | Nicolas Loubet, Qing Liu, Prasanna Khare, Stephane Allegret-Maret, Bruce B. Doris | 2017-04-11 |
| 9620641 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Ramachandra Divakaruni, Ali Khakifirooz, Alexander Reznicek, Soon-Cheon Seo | 2017-04-11 |
| 9620590 | Nanosheet channel-to-source and drain isolation | Marc A. Bergendahl, Fee Li Lie, Eric R. Miller, John R. Sporre, Sean Teehan | 2017-04-11 |
| 9620507 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region | Nicolas Loubet, Qing Liu, Prasanna Khare, Stephane Allegret-Maret, Bruce B. Doris | 2017-04-11 |
| 9620432 | Dielectric thermal conductor for passivating eFuse and metal resistor | Qing Cao, Zhengwen Li, Fei Liu | 2017-04-11 |
| 9613956 | Self-aligned punchthrough stop doping in bulk finFET by reflowing doped oxide | Michael P. Belyansky, Ramachandra Divakaruni | 2017-04-04 |