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Gate cut with high selectivity to preserve interlevel dielectric layer |
Andrew M. Greene, Ruilong Xie |
2017-12-05 |
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Method to form dual channel semiconductor material fins |
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| 9659786 |
Gate cut with high selectivity to preserve interlevel dielectric layer |
Andrew M. Greene, Ruilong Xie |
2017-05-23 |
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Method and structure for enabling high aspect ratio sacrificial gates |
Kangguo Cheng, Fee Li Lie, Jeffrey C. Shearer, John R. Sporre, Sean Teehan |
2017-05-23 |
| 9627277 |
Method and structure for enabling controlled spacer RIE |
Kangguo Cheng, Fee Li Lie, Eric R. Miller, Jeffrey C. Shearer, John R. Sporre +1 more |
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| 9601335 |
Trench formation for dielectric filled cut region |
Andrew M. Greene, Ruilong Xie, Peng Xu |
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Trench formation for dielectric filled cut region |
Andrew M. Greene, Ruilong Xie, Peng Xu |
2017-03-21 |
