Issued Patents 2017
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847260 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2017-12-19 |
| 9793378 | Fin field effect transistor device with reduced overlap capacitance and enhanced mechanical stability | Nicolas Loubet, Shom Ponoth, Qing Liu, Balasubramanian Pranatharthiharan | 2017-10-17 |
| 9768055 | Isolation regions for SOI devices | Qing Liu, Nicolas Loubet, Shom Ponoth, Maud Vinet, Bruce B. Doris | 2017-09-19 |
| 9685380 | Method to co-integrate SiGe and Si channels for finFET devices | Nicolas Loubet, Qing Liu | 2017-06-20 |
| 9673222 | Fin isolation structures facilitating different fin isolation schemes | Ajey Poovannummoottil Jacob, Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Rama Divakaruni | 2017-06-06 |
| 9620506 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region | Nicolas Loubet, Qing Liu, Stephane Allegret-Maret, Bruce B. Doris, Kangguo Cheng | 2017-04-11 |
| 9620507 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon-germanium region | Nicolas Loubet, Qing Liu, Stephane Allegret-Maret, Bruce B. Doris, Kangguo Cheng | 2017-04-11 |