Issued Patents 2017
Showing 176–200 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9583378 | Formation of germanium-containing channel region by thermal condensation utilizing an oxygen permeable material | Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi | 2017-02-28 |
| 9576858 | Dual work function integration for stacked FinFET | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-02-21 |
| 9577099 | Diamond shaped source drain epitaxy with underlying buffer layer | Veeraraghavan S. Basker, Eric C. Harley, Yue Ke, Henry K. Utomo | 2017-02-21 |
| 9576960 | Structure for finFET CMOS | Ali Khakifirooz, Kangguo Cheng | 2017-02-21 |
| 9576806 | FinFET device with vertical silicide on recessed source/drain epitaxy regions | Keith E. Fogel, Pranita Kerber, Qiqing C. Ouyang | 2017-02-21 |
| 9570297 | Elimination of defects in long aspect ratio trapping trench structures | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-02-14 |
| 9570590 | Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs | Bruce B. Doris, Joshua M. Rubin, Tenko Yamashita | 2017-02-14 |
| 9570575 | Capacitor in strain relaxed buffer | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-02-14 |
| 9570563 | III-V compound and Germanium compound nanowire suspension with Germanium-containing release layer | Guy M. Cohen, Isaac Lauer, Jeffrey W. Sleight | 2017-02-14 |
| 9570551 | Replacement III-V or germanium nanowires by unilateral confined epitaxial growth | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-02-14 |
| 9570443 | Field effect transistor including strained germanium fins | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-02-14 |
| 9570360 | Dual channel material for finFET for high performance CMOS | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2017-02-14 |
| 9570356 | Multiple gate length vertical field-effect-transistors | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-02-14 |
| 9570300 | Strain relaxed buffer layers with virtually defect free regions | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-02-14 |
| 9570298 | Localized elastic strain relaxed buffer | Veeraraghavan S. Basker, Oleg Gluschenkov, Shogo Mochizuki | 2017-02-14 |
| 9564326 | Lithography using interface reaction | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-02-07 |
| 9564439 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2017-02-07 |
| 9564373 | Forming a CMOS with dual strained channels | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-02-07 |
| 9564310 | Metal-insulator-metal capacitor fabrication with unitary sputtering process | Praneet Adusumilli, Oscar van der Straten, Chih-Chao Yang | 2017-02-07 |
| 9558950 | Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy | Kangguo Cheng, Pouya Hashemi, Shogo Mochizuki | 2017-01-31 |
| 9559013 | Stacked nanowire semiconductor device | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-01-31 |
| 9552988 | Tone inverted directed self-assembly (DSA) fin patterning | Hong He, Chi-Chun Liu, Chiahsun Tseng, Tenko Yamashita | 2017-01-24 |
| 9548386 | Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained silicon fins for nFET devices | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2017-01-17 |
| 9548319 | Structure for integration of an III-V compound semiconductor on SOI | Hemanth Jagannathan | 2017-01-17 |
| 9543302 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz | 2017-01-10 |