Issued Patents 2017
Showing 126–150 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9659823 | Highly scaled tunnel FET with tight pitch and method to fabricate same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-23 |
| 9653285 | Double aspect ratio trapping | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2017-05-16 |
| 9653582 | Forming a Fin using double trench epitaxy | Veeraraghavan S. Basker, Pouya Hashemi, Shogo Mochizuki | 2017-05-16 |
| 9653580 | Semiconductor device including strained finFET | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-16 |
| 9653541 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Darsen D. Lu, Kern Rim | 2017-05-16 |
| 9653465 | Vertical transistors having different gate lengths | Karthik Balakrishnan, Pouya Hashemi, Tak H. Ning | 2017-05-16 |
| 9653362 | Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-16 |
| 9653289 | Fabrication of nano-sheet transistors with different threshold voltages | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-16 |
| 9647123 | Self-aligned sigma extension regions for vertical transistors | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-09 |
| 9647119 | Structure and method for tensile and compressive strained silicon germanium with same germanium concentration by single epitaxy step | Pranita Kerber, Qiqing C. Ouyang, Dominic J. Schepis | 2017-05-09 |
| 9647113 | Strained FinFET by epitaxial stressor independent of gate pitch | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Charan V. Surisetty | 2017-05-09 |
| 9647112 | Fabrication of strained vertical P-type field effect transistors by bottom condensation | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-09 |
| 9640667 | III-V vertical field effect transistors with tunable bandgap source/drain regions | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-02 |
| 9633912 | Complementary heterogeneous MOSFET using global SiGe substrate and hard-mask memorized germanium dilution for nFET | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-04-25 |
| 9634142 | Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing | Dominic J. Schepis, Pouya Hashemi, Kangguo Cheng | 2017-04-25 |
| 9634028 | Metallized junction FinFET structures | Bruce B. Doris, Pranita Kerber, Joshua M. Rubin | 2017-04-25 |
| 9633943 | Method and structure for forming on-chip anti-fuse with reduced breakdown voltage | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-04-25 |
| 9633908 | Method for forming a semiconductor structure containing high mobility semiconductor channel materials | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-04-25 |
| 9627270 | Dual work function integration for stacked FinFET | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-04-18 |
| 9627536 | Field effect transistors with strained channel features | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-04-18 |
| 9627491 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-04-18 |
| 9627410 | Metallized junction FinFET structures | Bruce B. Doris, Pranita Kerber, Joshua M. Rubin | 2017-04-18 |
| 9627381 | Confined N-well for SiGe strain relaxed buffer structures | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-04-18 |
| 9627267 | Integrated circuit having strained fins on bulk substrate and method to fabricate same | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-04-18 |
| 9620641 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Soon-Cheon Seo | 2017-04-11 |