Issued Patents 2017
Showing 101–125 of 204 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9716145 | Strained stacked nanowire field-effect transistors (FETs) | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-07-25 |
| 9704860 | Epitaxial oxide fin segments to prevent strained semiconductor fin end relaxation | Karthik Balakrishnan, Keith E. Fogel, Sivananda K. Kanakasabapathy | 2017-07-11 |
| 9704753 | Minimizing shorting between FinFET epitaxial regions | Kangguo Cheng, Balasubramanian Pranatharthiharan, Charan V. Surisetty | 2017-07-11 |
| 9698145 | Implementation of long-channel thick-oxide devices in vertical transistor flow | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-07-04 |
| 9691854 | Semiconductor device including multiple fin heights | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-06-27 |
| 9685328 | Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with epitaxial rare earth oxide interlayers and methods to fabricate same | — | 2017-06-20 |
| 9685510 | SiGe CMOS with tensely strained NFET and compressively strained PFET | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-06-20 |
| 9685434 | Inter-level dielectric layer in replacement metal gates and resistor fabrication | Kangguo Cheng, Ali Khakifirooz, Charan V. Surisetty | 2017-06-20 |
| 9685409 | Top metal contact for vertical transistor structures | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-06-20 |
| 9679969 | Semiconductor device including epitaxially formed buried channel region | Jie Deng, Pranita Kerber, Qiqing C. Ouyang | 2017-06-13 |
| 9680018 | Method of forming high-germanium content silicon germanium alloy fins on insulator | Pouya Hashemi, Renee T. Mo, John A. Ott | 2017-06-13 |
| 9679763 | Silicon-on-insulator fin field-effect transistor device formed on a bulk substrate | Kangguo Cheng, Pouya Hashemi, Dominic J. Schepis | 2017-06-13 |
| 9673296 | Semiconductor structure having a source and a drain with reverse facets | Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Jinghong Li | 2017-06-06 |
| 9673307 | Lateral bipolar junction transistor with abrupt junction and compound buried oxide | Kevin K. Chan, Pouya Hashemi, Tak H. Ning | 2017-06-06 |
| 9673196 | Field effect transistors with varying threshold voltages | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz | 2017-06-06 |
| 9666489 | Stacked nanowire semiconductor device | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-30 |
| 9666669 | Superlattice lateral bipolar junction transistor | Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari | 2017-05-30 |
| 9666493 | Semiconductor device structure with 110-PFET and 111-NFET curent flow direction | Pouya Hashemi, Ali Khakifirooz, Shogo Mochizuki | 2017-05-30 |
| 9666486 | Contained punch through stopper for CMOS structures on a strain relaxed buffer substrate | Mona A. Ebrish, Hemanth Jagannathan, Shogo Mochizuki | 2017-05-30 |
| 9659829 | Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS | Karthik Balakrishnan, Pouya Hashemi, Sanghoon Lee | 2017-05-23 |
| 9660059 | Fin replacement in a field-effect transistor | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz, Dominic J. Schepis | 2017-05-23 |
| 9660032 | Method and apparatus providing improved thermal conductivity of strain relaxed buffer | Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi | 2017-05-23 |
| 9659963 | Contact formation to 3D monolithic stacked FinFETs | Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz | 2017-05-23 |
| 9659938 | Single source/drain epitaxy for co-integrating nFET semiconductor fins and pFET semiconductor fins | Hemanth Jagannathan | 2017-05-23 |
| 9659931 | Fin cut on sit level | Kangguo Cheng, Ali Khakifirooz, Tenko Yamashita | 2017-05-23 |