| 9793405 |
Semiconductor lateral sidewall growth from a semiconductor pillar |
Cheng-Wei Cheng, Effendi Leobandung, Renee T. Mo, Yanning Sun |
2017-10-17 |
| D797820 |
Refrigerator |
Kisoo Kim |
2017-09-19 |
| 9754969 |
Dual-material mandrel for epitaxial crystal growth on silicon |
Effendi Leobandung, Brent A. Wacaser |
2017-09-05 |
| 9735258 |
Nanowire semiconductor device |
Karthik Balakrishnan, Pouya Hashemi |
2017-08-15 |
| 9717392 |
Dishwasher |
Sangheon Yoon, Gapsu Shin |
2017-08-01 |
| 9711617 |
Dual isolation fin and method of making |
Cheng-Wei Cheng, Effendi Leobandung |
2017-07-18 |
| 9698239 |
Growing groups III-V lateral nanowire channels |
Effendi Leobandung, Renee T. Mo, Brent A. Wacaser |
2017-07-04 |
| 9658487 |
Display device including support frame having reflective stepped portion |
Byung-Seo Yoon, Seong-Yong Hwang |
2017-05-23 |
| 9659829 |
Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2017-05-23 |
| 9627266 |
Dual-semiconductor complementary metal-oxide-semiconductor device |
Effendi Leobandung, Renee T. Mo, Yanning Sun |
2017-04-18 |
| D783689 |
Refrigerator |
Kisoo Kim, Yeonjin Jo |
2017-04-11 |
| D783690 |
Refrigerator |
Kisoo Kim |
2017-04-11 |
| 9613873 |
Nanowire semiconductor device |
Karthik Balakrishnan, Pouya Hashemi |
2017-04-04 |
| 9601496 |
Semiconductor device having sacrificial layer pattern with concave sidewalls and method fabricating the same |
Hyunyong Go, Sunggil Kim, Kyong-Won An, Woosung Lee, Yongseok Cho |
2017-03-21 |
| 9590107 |
III-V gate-all-around field effect transistor using aspect ratio trapping |
Guy M. Cohen |
2017-03-07 |
| 9583567 |
III-V gate-all-around field effect transistor using aspect ratio trapping |
Guy M. Cohen |
2017-02-28 |
| 9547760 |
Method and system for authenticating user of a mobile device via hybrid biometics information |
Sangki Kang, Kyungtae Kim, Yangwook KIM, Chulhwan Lee, Seokyeong Jung |
2017-01-17 |
| D775675 |
Refrigerator |
Kisoo Kim, Yeonjin Jo |
2017-01-03 |
