| 9530864 |
Junction overlap control in a semiconductor device using a sacrificial spacer layer |
Steven Bentley, Michael Hargrove, Chia-Yu Chen, Ryan O. Jung, Sivanandha K. Kanakasabapathy |
2016-12-27 |
$8,113,000 |
| 9525048 |
Symmetrical extension junction formation with low-k spacer and dual epitaxial process in finFET device |
Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh |
2016-12-20 |
$6,917,000 |
| 9525069 |
Structure and method to form a FinFET device |
Andres Bryant, Jeffrey B. Johnson, Effendi Leobandung |
2016-12-20 |
$17,295,000 |
| 9520392 |
Semiconductor device including finFET and fin varactor |
Kangguo Cheng, Junli Wang, Ruilong Xie |
2016-12-13 |
$6,265,000 |
| 9520363 |
Forming CMOSFET structures with different contact liners |
Kangguo Cheng, Zuoguang Liu |
2016-12-13 |
$6,265,000 |
| 9520500 |
Self heating reduction for analog radio frequency (RF) device |
Injo Ok, Balasubramanian Pranatharthiharan, Charan V. Surisetty, Soon-Cheon Seo |
2016-12-13 |
$6,265,000 |
| 9514998 |
Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes |
Veeraraghavan S. Basker, Huiming Bu |
2016-12-06 |
$2,582,000 |
| 9508597 |
3D fin tunneling field effect transistor |
Zuoguang Liu, Xin Sun |
2016-11-29 |
$4,439,000 |
| 9508833 |
Punch through stopper for semiconductor device |
Effendi Leobandung |
2016-11-29 |
$4,543,000 |
| 9508587 |
Formation of isolation surrounding well implantation |
Kangguo Cheng, Shom Ponoth, Theodorus E. Standaert |
2016-11-29 |
$4,543,000 |
| 9502506 |
Structure for FinFET fins |
Effendi Leobandung |
2016-11-22 |
$3,414,000 |
| 9502523 |
Nanowire semiconductor device including lateral-etch barrier region |
Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh |
2016-11-22 |
$3,414,000 |
| 9502313 |
Polysilicon resistor formation in silicon-on-insulator replacement metal gate finFET processes |
Veeraraghavan S. Basker, Huiming Bu |
2016-11-22 |
$3,414,000 |
| 9502309 |
Forming CMOSFET structures with different contact liners |
Kangguo Cheng, Zuoguang Liu |
2016-11-22 |
$3,414,000 |
| 9496399 |
FinFET devices with multiple channel lengths |
Effendi Leobandung |
2016-11-15 |
$2,170,000 |
| 9483592 |
Maintaining stress in a layout design of an integrated circuit having fin-type field-effect transistor devices |
Karthik Balakrishnan, Pouya Hashemi, Jeffrey W. Sleight |
2016-11-01 |
$3,150,000 |
| 9484255 |
Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts |
Hiroaki Niimi, Shariq Siddiqui |
2016-11-01 |
$3,150,000 |
| 9484262 |
Stressed channel bulk fin field effect transistor |
Veeraraghavan S. Basker, Akira Hokazono, Hiroshi Itokawa, Chun-Chen Yeh |
2016-11-01 |
$3,150,000 |
| 9484306 |
MOSFET with asymmetric self-aligned contact |
Kangguo Cheng, Xin Miao, Ruilong Xie |
2016-11-01 |
$3,150,000 |
| 9484431 |
Pure boron for silicide contact |
Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta |
2016-11-01 |
$3,150,000 |
| 9484256 |
Pure boron for silicide contact |
Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta |
2016-11-01 |
$3,150,000 |
| 9478468 |
Dual metal contact scheme for CMOS devices |
Kangguo Cheng, Ali Khakifirooz, Alexander Reznicek |
2016-10-25 |
$7,053,000 |
| 9478549 |
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication |
Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert |
2016-10-25 |
$3,817,000 |
| 9472670 |
Field effect transistor device spacers |
Rama Kambhampati, Junli Wang, Ruilong Xie |
2016-10-18 |
$1,445,000 |
| 9472408 |
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress |
Takashi Ando, Veeraraghavan S. Basker, Johnathan E. Faltermeier, Hemanth Jagannathan |
2016-10-18 |
$1,445,000 |
