| 9530843 |
FinFET having an epitaxially grown semiconductor on the fin in the channel region |
Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Davood Shahrjerdi |
2016-12-27 |
$8,113,000 |
| 9530775 |
Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices |
Xiuyu Cai, Ruilong Xie, Kangguo Cheng |
2016-12-27 |
$8,113,000 |
| 9525027 |
Lateral bipolar junction transistor having graded SiGe base |
Pouya Hashemi, Darsen D. Lu, Alexander Reznicek, Dominic J. Schepis |
2016-12-20 |
$17,295,000 |
| 9520328 |
Type III-V and type IV semiconductor device formation |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9520397 |
Abrupt source/drain junction formation using a diffusion facilitation layer |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9515171 |
Radiation tolerant device structure |
Bruce B. Doris, Darsen D. Lu, Philip J. Oldiges |
2016-12-06 |
$2,582,000 |
| 9515173 |
Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek |
2016-12-06 |
$2,582,000 |
| 9508851 |
Formation of bulk SiGe fin with dielectric isolation by anodization |
Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek |
2016-11-29 |
$4,543,000 |
| 9508741 |
CMOS structure on SSOI wafer |
Bruce B. Doris, Hong He, Junli Wang |
2016-11-29 |
$4,543,000 |
| 9508810 |
FET with air gap spacer for improved overlap capacitance |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2016-11-29 |
$4,543,000 |
| 9502245 |
Elimination of defects in long aspect ratio trapping trench structures |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2016-11-22 |
$3,414,000 |
| 9502243 |
Multi-orientation SOI substrates for co-integration of different conductivity type semiconductor devices |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek |
2016-11-22 |
$3,414,000 |
| 9496373 |
Damage-resistant fin structures and FinFET CMOS |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2016-11-15 |
$2,170,000 |
| 9496282 |
Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition |
Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan |
2016-11-15 |
$2,170,000 |
| 9496343 |
Secondary use of aspect ratio trapping holes as eDRAM structure |
Kangguo Cheng, Bruce B. Doris, Alexander Reznicek |
2016-11-15 |
$2,170,000 |
| 9496356 |
Under-spacer doping in fin-based semiconductor devices |
Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III |
2016-11-15 |
$2,170,000 |
| 9496281 |
Dual isolation on SSOI wafer |
Bruce B. Doris, Hong He, Junli Wang |
2016-11-15 |
$2,170,000 |
| 9484359 |
MOSFET with work function adjusted metal backgate |
Kangguo Cheng, Bruce B. Doris, Pranita Kerber |
2016-11-01 |
$4,589,000 |
| 9484348 |
Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs |
Veeraraghavan S. Basker, Kangguo Cheng |
2016-11-01 |
$3,150,000 |
| 9484430 |
Back-end transistors with highly doped low-temperature contacts |
Wilfried E. Haensch, Bahman Hekmatshoar-Tabari, Tak H. Ning, Ghavam G. Shahidi, Davood Shahrjerdi |
2016-11-01 |
$4,589,000 |
| 9484464 |
Structure and method for adjusting threshold voltage of the array of transistors |
Jin Cai, Kangguo Cheng, Robert H. Dennard, Tak H. Ning |
2016-11-01 |
$3,150,000 |
| 9478658 |
Device and method for fabricating thin semiconductor channel and buried strain memorization layer |
Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi |
2016-10-25 |
$3,817,000 |
| 9478468 |
Dual metal contact scheme for CMOS devices |
Kangguo Cheng, Alexander Reznicek, Tenko Yamashita |
2016-10-25 |
$7,053,000 |
| 9472628 |
Heterogeneous source drain region and extension region |
Kangguo Cheng, Pouya Hashemi, Alexander Reznicek |
2016-10-18 |
$1,445,000 |
| 9472558 |
Semiconductor structures with stacked non-planar field effect transistors and methods of forming the structures |
Kangguo Cheng, Carl Radens, Robert C. Wong |
2016-10-18 |
$3,531,000 |
