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Lateral bipolar junction transistor having graded SiGe base |
Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek, Dominic J. Schepis |
2016-12-20 |
| 9515171 |
Radiation tolerant device structure |
Bruce B. Doris, Ali Khakifirooz, Philip J. Oldiges |
2016-12-06 |
| 9455250 |
Distributed decoupling capacitor |
Kangguo Cheng, Ali Khakifirooz, Ghavam G. Shahidi |
2016-09-27 |
| 9362400 |
Semiconductor device including dielectrically isolated finFETs and buried stressor |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2016-06-07 |
| 9299618 |
Structure and method for advanced bulk fin isolation |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2016-03-29 |
| 9276113 |
Structure and method to make strained FinFET with improved junction capacitance and low leakage |
Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Alexander Reznicek, Kern Rim |
2016-03-01 |
