| 9530843 |
FinFET having an epitaxially grown semiconductor on the fin in the channel region |
Thomas N. Adam, Kangguo Cheng, Ali Khakifirooz, Davood Shahrjerdi |
2016-12-27 |
$8,113,000 |
| 9530772 |
Methods of manufacturing devices including gates with multiple lengths |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-27 |
$3,909,000 |
| 9530669 |
Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-27 |
$3,909,000 |
| 9530699 |
Semiconductor device including gate channel having adjusted threshold voltage |
Pranita Kerber, Qiqing C. Ouyang |
2016-12-27 |
$3,909,000 |
| 9525027 |
Lateral bipolar junction transistor having graded SiGe base |
Pouya Hashemi, Ali Khakifirooz, Darsen D. Lu, Dominic J. Schepis |
2016-12-20 |
$17,295,000 |
| 9525064 |
Channel-last replacement metal-gate vertical field effect transistor |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-20 |
$6,917,000 |
| 9524882 |
Contact structure and extension formation for III-V nFET |
Veeraraghavan S. Basker |
2016-12-20 |
$6,917,000 |
| 9524969 |
Integrated circuit having strained fins on bulk substrate |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-20 |
$6,917,000 |
| 9520469 |
Fabrication of fin structures having high germanium content |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-13 |
$6,265,000 |
| 9520328 |
Type III-V and type IV semiconductor device formation |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz |
2016-12-13 |
$6,265,000 |
| 9520394 |
Contact structure and extension formation for III-V nFET |
Veeraraghavan S. Basker |
2016-12-13 |
$6,265,000 |
| 9520397 |
Abrupt source/drain junction formation using a diffusion facilitation layer |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz |
2016-12-13 |
$6,265,000 |
| 9514995 |
Implant-free punch through doping layer formation for bulk FinFET structures |
Keith E. Fogel, Devendra K. Sadana, Dominic J. Schepis |
2016-12-06 |
$17,587,000 |
| 9515073 |
III-V semiconductor CMOS FinFET device |
Hemanth Jagannathan, Devendra K. Sadana, Charan V. Surisetty |
2016-12-06 |
$2,582,000 |
| 9515194 |
Nano-ribbon channel transistor with back-bias control |
Karthik Balakrishnan, Kangguo Cheng, Pouya Hashemi |
2016-12-06 |
$2,582,000 |
| 9515173 |
Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz |
2016-12-06 |
$2,582,000 |
| 9514997 |
Silicon-germanium FinFET device with controlled junction |
Kangguo Cheng, Pouya Hashemi, Kam-Leung Lee |
2016-12-06 |
$2,582,000 |
| 9508810 |
FET with air gap spacer for improved overlap capacitance |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz |
2016-11-29 |
$4,543,000 |
| 9508725 |
Trench to trench fin short mitigation |
Veeraraghavan S. Basker |
2016-11-29 |
$4,543,000 |
| 9508851 |
Formation of bulk SiGe fin with dielectric isolation by anodization |
Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz |
2016-11-29 |
$4,543,000 |
| 9502540 |
Uniform height tall fins with varying silicon germanium concentrations |
Stephen W. Bedell, Bruce B. Doris, Keith E. Fogel |
2016-11-22 |
$3,414,000 |
| 9502408 |
FinFET device including fins having a smaller thickness in a channel region, and a method of manufacturing same |
Pranita Kerber, Qiqing C. Ouyang |
2016-11-22 |
$8,427,000 |
| 9502420 |
Structure and method for highly strained germanium channel fins for high mobility pFINFETs |
Stephen W. Bedell, Lisa F. Edge, Pranita Kerber, Qiqing C. Ouyang |
2016-11-22 |
$3,414,000 |
| 9502245 |
Elimination of defects in long aspect ratio trapping trench structures |
Kangguo Cheng, Pouya Hashemi, Ali Khakifirooz |
2016-11-22 |
$3,414,000 |
| 9502243 |
Multi-orientation SOI substrates for co-integration of different conductivity type semiconductor devices |
Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz |
2016-11-22 |
$3,414,000 |
