| 9530669 |
Method of making a semiconductor device having a semiconductor material on a relaxed semiconductor including replacing a strained, selective etchable material, with a low density dielectric in a cavity |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-27 |
$3,909,000 |
| 9530772 |
Methods of manufacturing devices including gates with multiple lengths |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-27 |
$3,909,000 |
| 9530843 |
FinFET having an epitaxially grown semiconductor on the fin in the channel region |
Thomas N. Adam, Ali Khakifirooz, Alexander Reznicek, Davood Shahrjerdi |
2016-12-27 |
$8,113,000 |
| 9530701 |
Method of forming semiconductor fins on SOI substrate |
Joseph Ervin, Juntao Li, Chengwen Pei, Geng Wang |
2016-12-27 |
$3,909,000 |
| 9530698 |
Method and structure for forming FinFET CMOS with dual doped STI regions |
Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang |
2016-12-27 |
$3,909,000 |
| 9530775 |
Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices |
Xiuyu Cai, Ruilong Xie, Ali Khakifirooz |
2016-12-27 |
$8,113,000 |
| 9525064 |
Channel-last replacement metal-gate vertical field effect transistor |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-20 |
$6,917,000 |
| 9525147 |
Fringing field assisted dielectrophoresis assembly of carbon nanotubes |
Qing Cao, Shu-Jen Han, Zhengwen Li, Fei Liu |
2016-12-20 |
$6,917,000 |
| 9524969 |
Integrated circuit having strained fins on bulk substrate |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-20 |
$6,917,000 |
| 9520469 |
Fabrication of fin structures having high germanium content |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9520392 |
Semiconductor device including finFET and fin varactor |
Junli Wang, Ruilong Xie, Tenko Yamashita |
2016-12-13 |
$6,265,000 |
| 9520397 |
Abrupt source/drain junction formation using a diffusion facilitation layer |
Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9520328 |
Type III-V and type IV semiconductor device formation |
Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-13 |
$6,265,000 |
| 9520363 |
Forming CMOSFET structures with different contact liners |
Zuoguang Liu, Tenko Yamashita |
2016-12-13 |
$6,265,000 |
| 9515194 |
Nano-ribbon channel transistor with back-bias control |
Karthik Balakrishnan, Pouya Hashemi, Alexander Reznicek |
2016-12-06 |
$2,582,000 |
| 9514997 |
Silicon-germanium FinFET device with controlled junction |
Pouya Hashemi, Kam-Leung Lee, Alexander Reznicek |
2016-12-06 |
$2,582,000 |
| 9515089 |
Bulk fin formation with vertical fin sidewall profile |
Hong He, Sivananda K. Kanakasabapathy, Chiahsun Tseng, Yunpeng Yin |
2016-12-06 |
$2,582,000 |
| 9515140 |
Patterned strained semiconductor substrate and device |
Ramachandra Divakaruni |
2016-12-06 |
$17,587,000 |
| 9515173 |
Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors |
Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-12-06 |
$2,582,000 |
| 9508829 |
Nanosheet MOSFET with full-height air-gap spacer |
Bruce B. Doris, Michael A. Guillorn, Xin Miao |
2016-11-29 |
$4,543,000 |
| 9508851 |
Formation of bulk SiGe fin with dielectric isolation by anodization |
Thomas N. Adam, Bruce B. Doris, Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-11-29 |
$4,543,000 |
| 9508587 |
Formation of isolation surrounding well implantation |
Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita |
2016-11-29 |
$4,543,000 |
| 9508810 |
FET with air gap spacer for improved overlap capacitance |
Pouya Hashemi, Ali Khakifirooz, Alexander Reznicek |
2016-11-29 |
$4,543,000 |
| 9508818 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang |
2016-11-29 |
$4,543,000 |
| 9508825 |
Method and structure for forming gate contact above active area with trench silicide |
Veeraraghavan S. Basker, Theodorus E. Standaert, Junli Wang |
2016-11-29 |
$4,543,000 |
