| 9515141 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie |
2016-12-06 |
| 9515089 |
Bulk fin formation with vertical fin sidewall profile |
Kangguo Cheng, Hong He, Chiahsun Tseng, Yunpeng Yin |
2016-12-06 |
| 9502411 |
Strained finFET device fabrication |
Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie, Stuart A. Sieg |
2016-11-22 |
| 9472415 |
Directional chemical oxide etch technique |
Emre Alptekin, Ahmet S. Ozcan, Viraj Y. Sardesai, Cung D. Tran |
2016-10-18 |
| 9472447 |
Confined eptaxial growth for continued pitch scaling |
Balasubramanian Pranatharthiharan |
2016-10-18 |
| 9472506 |
Registration mark formation during sidewall image transfer process |
David J. Conklin, Allen H. Gabor, Byeong Y. Kim, Fee Li Lie, Stuart A. Sieg |
2016-10-18 |
| 9431399 |
Method for forming merged contact for semiconductor device |
Emre Alptekin, Balasubramanian Pranatharthiharan, Ravikumar Ramachandran, Mickey H. Yu |
2016-08-30 |
| 9331148 |
FinFET device with channel strain |
Bruce B. Doris, Hong He, Gauri Karve, Fee Li Lie |
2016-05-03 |
| 9312136 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Injo Ok, Tenko Yamashita |
2016-04-12 |
| 9305845 |
Self-aligned quadruple patterning process |
Matthew E. Colburn, Fee Li Lie, Stuart A. Sieg |
2016-04-05 |
| 9299705 |
Method of forming semiconductor fins and insulating fence fins on a same substrate |
— |
2016-03-29 |
| 9287135 |
Sidewall image transfer process for fin patterning |
Bruce B. Doris, Hong He, Alexander Reznicek |
2016-03-15 |
