| 9520500 |
Self heating reduction for analog radio frequency (RF) device |
Balasubramanian Pranatharthiharan, Charan V. Surisetty, Soon-Cheon Seo, Tenko Yamashita |
2016-12-13 |
| 9508816 |
Low resistance replacement metal gate structure |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-11-29 |
| 9484401 |
Capacitance reduction for advanced technology nodes |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-11-01 |
| 9461168 |
Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty |
2016-10-04 |
| 9431486 |
Channel strain and controlling lateral epitaxial growth of the source and drain in FinFET devices |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty |
2016-08-30 |
| 9406568 |
Semiconductor structure containing low-resistance source and drain contacts |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-08-02 |
| 9397006 |
Co-integration of different fin pitches for logic and analog devices |
Balasubramanian Pranatharthiharan, Soon-Cheon Seo, Charan V. Surisetty |
2016-07-19 |
| 9337094 |
Method of forming contact useful in replacement metal gate processing and related semiconductor structure |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-05-10 |
| 9330983 |
CMOS NFET and PFET comparable spacer width |
Kangguo Cheng, Soon-Cheon Seo |
2016-05-03 |
| 9312136 |
Replacement metal gate stack for diffusion prevention |
Takashi Ando, Johnathan E. Faltermeier, Su Chen Fan, Sivananda K. Kanakasabapathy, Tenko Yamashita |
2016-04-12 |
| 9305923 |
Low resistance replacement metal gate structure |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-04-05 |
| 9275901 |
Semiconductor device having reduced contact resistance |
Balasubramanian Pranatharthiharan, Charan V. Surisetty |
2016-03-01 |
